1200-V Low-Loss IGBT Module With Low Noise Characteristics and High ${d}I_{C}/{d}t$ Controllability

Onozawa, Yuichi; Otsuki, M.; Iwamuro, Noriyuki; Miyashita, S.; Miyasaka, Toru; Seki, Y.; Matsumoto, Takashi

doi:10.1109/tia.2006.890024

Cited by 38 publications

(5 citation statements)

References 5 publications

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“…If the voltage difference across the gate oxide (V PF -V ge ) is high, a reverse displacement current will be induced to charge the gate capacitance to a negative value, which has a significant impact on the dV ce /dt and dI c /dt controllability. 19) Figure 8 compares the V PF and the V ge of TIGBT and TCIGBT during turn-on transients. It can be seen that there is a significant potential difference between V PF and V ge in the TIGBT, which is caused by the hole current flow within the P-float region.…”

Section: Turn-on Performance Of Tigbt and Tcigbtmentioning

confidence: 99%

“…Furthermore, the negative gate capacitance (NGC) effect during the turn-on transients of IGBTs cause strong oscillations under short-circuit conditions 18) and degrade the turn-on dI c /dt controllability, resulting in EMI noise in the applications. 19) To reduce or eliminate the EMI noise emission from IGBT modules, the NGC effect must be eliminated or suppressed without sacrificing other electrical characteristics. IGBT structures with P-float resistors 19,20) or hole path structure 21) can divert some of the holes and suppress the NGC effect, but at the cost of increased V ce(sat) due to weakened injection enhancement (IE) effect.…”

Section: Introductionmentioning

confidence: 99%

“…19) To reduce or eliminate the EMI noise emission from IGBT modules, the NGC effect must be eliminated or suppressed without sacrificing other electrical characteristics. IGBT structures with P-float resistors 19,20) or hole path structure 21) can divert some of the holes and suppress the NGC effect, but at the cost of increased V ce(sat) due to weakened injection enhancement (IE) effect. Other IGBT cathode designs, such as side-gate design 12) and separate P-float design, 22) can also suppress the NGC effect by lowering the potential differences across the gate oxide.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

Luo

Madathil

Saito

et al. 2022

Jpn. J. Appl. Phys.

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In this paper, the turn-on characteristics of 1.2-kV Trench IGBT (TIGBT) and Trench Clustered IGBT (TCIGBT) are investigated through TCAD simulations and experiments. TCIGBT shows much lower turn-on energy loss (Eon) due to higher current gain than an equivalent TIGBT and the negative gate capacitance effect is effectively suppressed in the TCIGBT by its self-clamping feature and PMOS action. In addition, the impact of 3-D scaling rules on the turn-on performance of TIGBT and TCIGBT is analyzed in detail. Simulation results show that scaling rules result in a significant reduction of Eon in both TIGBT and TCIGBT. Furthermore, the experimental results indicate that TCIGBT technology is well suited for high current density operations with low power losses. Compared to the state-of-the-art IGBT technology, an 18 % reduction of total power losses can be achieved by the TCIGBT operated at 300 A/cm2 and 175 °C.

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Section: Turn-on Performance Of Tigbt and Tcigbtmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

Luo

Madathil

Saito

et al. 2022

Jpn. J. Appl. Phys.

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show abstract

“…problems [5][6][7][8]. The fin p-body structure and trench shield gate formed at the side-wall of the polysilicon gate are beneficial for reducing the Miller capacitance (C res ) and weakening the dV/ dt influence during the turn-on period for IGBTs [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

High voltage carrier stored trench bipolar transistor with common anode polysilicon diodes gate structure for low Miller capacitance and low electromagnetic interference noise

Zhao¹,

Li²,

Hu³

et al. 2021

Semicond. Sci. Technol.

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A novel 3300 V high voltage carrier stored trench bipolar transistor (CSTBT) with common anode polysilicon diodes gate structure (CAPD-CSTBT) is proposed. The PN junctions and N+ emitter region in the polysilicon gate structure are beneficial for reducing the Miller capacitance by 88.1% and the input capacitance by 26.0%, while due to the polysilicon PN junction barrier, the forward and reverse gate bias voltage will not be affected. As a result, the transient energy loss could be decreased by 32.2% with the same range of R g. Since the displacement current is shielded by the embedded emitter on the bottom of the CAPD gate structure, the (dI CE /dt)max/I Load is lower than that of the Fin-P-CSTBT by 81.8% on average with the same range of turn-on energy loss. Furthermore, the proposed structure features a 58.7% lower (dV KA /dt)max/V cc value for the free-wheeling diode on average. By Fourier transformation, the proposed structure represents lower amplitudes for the I CE and V KA spectrums during the turn-on period, which is a drastic suppression of electromagnetic interference noise.

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“…Owing to the superior performance derived from MOS gate control and bipolar conduction, insulated gate bipolar transistors (IGBTs) are widely used in a variety of power switching related areas, such as motor drivers, electric vehicles, power supplies, etc. [1][2][3] Over the last few years, IGBT performance has significantly improved due to the advent of trench gate, field stop (FS, also referred to as soft/light punch through) and carrier enhancement (such as IEGT, carrier stored, floating p layer, etc.) technology.…”

Section: Introductionmentioning

confidence: 99%

A novel high performance TFS SJ IGBT with a buried oxide layer

Zhang¹,

Li²,

Zhang³

et al. 2014

Chinese Phys. B

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A novel high performance trench field stop (TFS) superjunction (SJ) insulated gate bipolar transistor (IGBT) with a buried oxide (BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT (Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop (V ce(on) ) and an improved tradeoff between V ce(on) and turn-off loss (E off ), with no breakdown voltage (BV ) degraded. The results show that with the spacing between the gate and the BO layer W o = 0.2 µm, the thickness of the BO layer L o = 0.2 µm, the thickness of the drift region L d = 90 µm, the half width and doping concentration of the N-and P-pillars W n = W p = 2.5 µm and N n = N p = 3 × 10 15 cm −3 , the V ce(on) and E off of the proposed structure are 1.08 V and 2.81 mJ/cm 2 with the collector doping concentration N c = 1 × 10 18 cm −3 and 1.12 V and 1.73 mJ/cm 2 with N c = 5 × 10 17 cm −3 , respectively. However, with the same device parameters, the V ce(on) and E off for the Conv-SJ are 1.81 V and 2.88 mJ/cm 2 with N c = 1 × 10 18 cm −3 and 1.98 V and 2.82 mJ/cm 2 with N c = 5 × 10 17 cm −3 , respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.

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1200-V Low-Loss IGBT Module With Low Noise Characteristics and High ${d}I_{C}/{d}t$ Controllability

Cited by 38 publications

References 5 publications

Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

High voltage carrier stored trench bipolar transistor with common anode polysilicon diodes gate structure for low Miller capacitance and low electromagnetic interference noise

A novel high performance TFS SJ IGBT with a buried oxide layer

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