1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect

Fu, Hao; Wei, Zhaoxiang; Liu, Siyang; Wei, Jiaxing; Xu, Hang; Ni, Lihua; Yang, Zenan; Sun, Weifeng

doi:10.1016/j.microrel.2021.114249

Cited by 9 publications

(2 citation statements)

References 16 publications

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“…The structure includes a trench gate with split-gate electrodes and a thicker P-Poly-Si layer, resulting in reduced gate charge and improved switching performance. To suppress the depletion layer, an n-type doped current spreading layer (N-CSL) is formed under the entire P-well region [24]. To maintain the breakdown voltage (BV) of the device structure while maintaining transfer and output characteristics similar to those of C-ATMOS [25][26][27], the depth of the P-well on the right side is not changed.…”

Section: Introductionmentioning

confidence: 99%

A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance

Yu,

Cheng,

et al. 2024

Micromachines

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In this paper, a novel asymmetric trench SiC MOSFET with a Poly-Si/SiC heterojunction diode (HJD-ATMOS) is designed to improve its reverse conduction characteristics and switching performance. This structure features an integrated heterojunction diode, which improves body diode characteristics without affecting device static characteristics. The heterojunction diode acts as a freewheeling diode during reverse conduction, reducing the cut-in voltage (Vcut-in) to a lower level than conventional asymmetric trench SiC MOSFET (C-ATMOS), while maintaining a similar breakdown voltage. Meanwhile, the split gate structure reduces gate-to-drain charge (Qgd). Through TCAD simulation, the HJD-ATMOS decreases Vcut-in by 53.04% compared to the C-ATMOS. Both Qgd and switching loss are reduced, with a decrease of 31.91% in Qgd and 40.29% in switching loss.

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Section: Introductionmentioning

confidence: 99%

A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance

Yu,

Cheng,

et al. 2024

Micromachines

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“…Silicon carbide (SiC) power metal-oxide field-effect transistors (MOSFETs) have exhibited competitive performance due to their superior electrical and thermal properties, such as high voltage, high frequency, and high thermal conductivity. [1][2][3][4][5] For the reasons listed above, future accelerator facilities and space applications would also like to use the electrical benefits of SiC power MOSFETs. Nevertheless, SiC power MOSFETs are vulnerable to cosmic ray-induced high-energy heavy ions, resulting in catastrophic single-event burnout (SEB).…”

Section: Introductionmentioning

confidence: 99%

A compact circuit-level model for single-event burnout in SiC power MOSFET devices

Shen

Zhang

et al. 2022

Jpn. J. Appl. Phys.

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Key parameters of the equivalent circuit model of the MOSFET are analyzed and determined in detail, including nonlinear parasitic drain-source capacitance and nonlinear parasitic gate-drain capacitance. The effect of the parasitic bipolar junction transistor (PBJT) is considered and an iteratively optimized double-exponential current source is used to simulate the transient power current generated by incident heavy ions. The equivalent circuit model of the MOSFET is verified by comparing the SPICE simulation curves, TCAD simulation curves, and the curves in the SiC power double trench MOSFET’s datasheet (SCT3080KL). Then, the SEB is caused by heavy ions at various incident positions, linear energy transfer (LET) values, drain-source voltage (Vds), and gate-source voltage (Vgs) using the TCAD and HSPICE simulations. Simulation results on the SPICE model coincide well with the TCAD simulation results. Moreover, this compact model is used to predict the SEB threshold for devices with higher breakdown voltage rating

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Applications of Emerging Materials: High Power Devices

Ajayan¹,

Tayal²,

Thoutam³

2022

Emerging Materials

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1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect

Cited by 9 publications

References 16 publications

A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance

A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance

A compact circuit-level model for single-event burnout in SiC power MOSFET devices

Applications of Emerging Materials: High Power Devices

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