Proceedings of the 16th International Symposium on Power Semiconductor Devices &Amp;amp; IC's 2004
DOI: 10.1109/wct.2004.239842
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1200V reverse blocking IGBT with low loss for matrix converter

Abstract: This paper presents, for the first time, the design concepts of an isolation type 12OOV reverse blocking IGBT(RB-IGBT) for matrix converter. The device features thin wafer technology and deep boron diffusion technique. From experimental results, it has been found that the 12OOV RBIGBT attains about 20% reduction in total generated loss when it compared to the Combination of the IGBT and the diode while keeping improved blocking capability with both polarities. The high efficiency matrix converter can be achiev… Show more

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Cited by 44 publications
(11 citation statements)
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“…A modulation scheme such as the SS-I with no switch-switch commutations is recommended in this case. It should be noticed that the switching performance of the RB-IGBT has been improved in recent years by adopting a deep boron diffusion technique and a thin wafer technology [23], [33], [34]. With electron irradiation, the carrier lifetime can be shortened to reduce the reverse recovery current [23].…”
Section: Discussionmentioning
confidence: 99%
“…A modulation scheme such as the SS-I with no switch-switch commutations is recommended in this case. It should be noticed that the switching performance of the RB-IGBT has been improved in recent years by adopting a deep boron diffusion technique and a thin wafer technology [23], [33], [34]. With electron irradiation, the carrier lifetime can be shortened to reduce the reverse recovery current [23].…”
Section: Discussionmentioning
confidence: 99%
“…14, the RB-IGBT has longer tail current and higher voltage spike than the other two kinds of switches. It is because of the long carrier lifetime of RB-IGBT and the heavily doped p+ layer on its collector [16] [17]. There is a trade-off between the conduction loss and switching speed [16].…”
Section: Device Characterization and Commutation Analysismentioning
confidence: 99%
“…It is obvious that the characteristics of the diode influence the switching waveforms much. In the case of RB-IGBT, there is much larger current spike because it behaves like a Si PIN diode under reverse voltage with more extra charge than the Si soft-recovery diode [15][16][17][18]. Comparing the switching waveforms in Fig.…”
Section: B Positive Turn On and Reverse Turn Offmentioning
confidence: 99%
“…Another issue that puts the CSC step-aside is the better control and efficiency of VSC. However, the development of reverse blocking IGBT (RBIGBT) semiconductor devices will improve the performance of the CSC, since the RBIGBT has lower power losses rather than IGBT with series diode [1], [2]. Researches have shown certain advantages of CSC.…”
Section: Introductionmentioning
confidence: 99%