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This paper presents, for the first time, the design concepts of an isolation type 12OOV reverse blocking IGBT(RB-IGBT) for matrix converter. The device features thin wafer technology and deep boron diffusion technique. From experimental results, it has been found that the 12OOV RBIGBT attains about 20% reduction in total generated loss when it compared to the Combination of the IGBT and the diode while keeping improved blocking capability with both polarities. The high efficiency matrix converter can be achieved by using the RB-IGBTs and has a great possibility to replace the conventional DC-linked-type circuits.

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