13.5L: Late‐News Paper: A Simple Pixel Circuit for Ultra High Resolution Active Matrix OLED‐on‐Silicon (OLEDoS) Microdisplays with Highly Uniform Luminance

Abstract

In this paper, a simple pixel circuit is proposed for the high resolution organic light emitting diode-on-silicon (OLEDoS) microdisplay. The proposed pixel circuit achieves a wide input data voltage range using the body effect and suppresses the emission current deviation due to the threshold voltage variation of the driving transistor using the capacitive coupling effect. The proposed pixel circuit which consists of three n-type MOSFETs and one storage capacitor occupies an area of 3 μm × 9 μm. The simulated results show that the proposed pixel circuit achieves maximum input data voltage ranges of 1.37 V, 1.51 V, and 1.34 V for red, green, and blue OLED, respectively, from 1-gray to 255-gray level, and the emission current error ranges from −2.85% to +2.96% under the threshold voltage variation of ±5 mV.

An AMOLED pixel circuit for high image quality of 1000 ppi mobile displays in AR and VR applications

“…Organic light‐emitting diode (OLED) on silicon displays have been widely used for augmented and virtual reality (AR and VR) applications such as head‐mounted displays (HMDs) due to their high contrast ratio and fast optical response time . However, they are fabricated on a silicon wafer, thus requiring high fabrication cost. To reduce the fabrication cost, active‐matrix OLED (AMOLED) displays on a glass or flexible substrate can be used for HMDs .…”

P‐31: Pixel Circuit with Backgate Feedback for Deep and Rich Black Expressions on Light‐Emitting Display

“…When the drive transistor is of low-temperature polycrystalline silicon (LTPS), it is common to separately form the characteristics of the drive transistor and the switching transistors. For OLED on silicon, this problem has been addressed by circuits [1][2][3], but there is room for further improvement. For example, it is desirable to solve the problem with small pixel circuit and simple input signals.…”

P‐53: A Novel Pixel Circuit Providing Expanded Input Voltage Range for OLEDoS Microdisplays

“…Thus, the proposed circuit can compensate for P-53 / B. Liu threshold voltage deviation, and the input voltage range can be expanded by 4/α times compared to that of the traditional 2T1C pixel circuit [1]. In addition, when we take the body effect of T1-T4 into account, from [15] we can conclude that the data voltage range can be further expanded.…”

“…High resolution and low power consumption are required by the microdisplay applications. Given the size and resolution constrains, every OLEDoS sub-pixel is limited to area of tens of μm 2 [8], [15][16][17][18]. The luminance is proportional to OLED current density [13].…”

“…Generally, two approaches were adopted to build the simple pixel circuits in previous works [7][8][9][10][11][12][13][14][15][16]. The first one is current programming.…”