13 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

Uvin, Sarah; Kumari, Sulakshna; Groote, Andreas De; Verstuyft, Steven; Lepage, Guy; Verheyen, Peter; Campenhout, Joris Van; Morthier, Geert; Thourhout, Dries Van; Roelkens, Günther

doi:10.1364/oe.26.018302

Cited by 38 publications

(21 citation statements)

References 20 publications

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“…While Ge-photodiodes have been successfully integrated in a SOI platform [33,76,77,78], the integration of laser sources is still challenging [79]. Current approaches employ wafer-to-wafer [35,80] or die-to-wafer [31,81,82] bonding.…”

Section: System Integrationmentioning

confidence: 99%

Optical Biosensors Based on Silicon-On-Insulator Ring Resonators: A Review

et al. 2019

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Recent developments in optical biosensors based on integrated photonic devices are reviewed with a special emphasis on silicon-on-insulator ring resonators. The review is mainly devoted to the following aspects: (1) Principles of sensing mechanism, (2) sensor design, (3) biofunctionalization procedures for specific molecule detection and (4) system integration and measurement set-ups. The inherent challenges of implementing photonics-based biosensors to meet specific requirements of applications in medicine, food analysis, and environmental monitoring are discussed.

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Section: System Integrationmentioning

confidence: 99%

Optical Biosensors Based on Silicon-On-Insulator Ring Resonators: A Review

et al. 2019

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“…[3] Regarding this, native III-V devices have been integrated with Si photonic chips through co-packaging and heterogeneous integration. [4][5][6][7] Since the demonstration of the first prototype of a heterogeneously integrated DFB laser on Si, [7] it has only taken ~10 years to commercialize a 100 Gb/s integrated Si photonic four-channel course wavelength division multiplexed (CWDM) transmitter, and the industry expects to ramp up to 400 Gb/s in the next two years and then to double or quadruple that rate in just two more years. [8] Meanwhile, monolithic integration of III-V lasers on Si by epitaxial growth offers an elegant and lower cost path to integrate laser sources in a Si photonics platform.…”

Section: Introductionmentioning

confidence: 99%

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Wan

Norman

Tong

et al. 2020

Laser & Photonics Reviews

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Distributed feedback (DFB) lasers represent a central focus for wavelength‐division‐multiplexing‐based transceivers in metropolitan networks. Here, the first 1.3 µm quantum dot (QD) DFB lasers grown on a complementary metal‐oxide‐semiconductor (CMOS)‐compatible (001) Si substrate are reported. Temperature‐stable, single‐longitudinal‐mode operation is achieved with a side‐mode suppression ratio of more than 50 dB and a threshold current density of 440 A cm−2. A single‐lane rate of 128 Gbit s−1 with a net spectral efficiency of 1.67 bits−1 Hz−1 is demonstrated, with an aggregate total transmission capacity of 640 Gbit s−1 using five channels in the O‐band. Apart from the QD active region growth, the overall fabrication is essentially identical to the commercial process for quantum well (QW) DFB lasers. This provides a process‐compatible path for QD technology into commercial applications previously filled by QW devices. In addition, the capability to grow laser epi across entire CMOS‐compatible (001) Si wafers adds extra benefits of reduced cost, improved heat dissipation, and manufacturing scalability. Through direct epitaxial integration of III–Vs and Si, one can envision a revolution of the photonics industry in the same way that CMOS design and processing revolutionize the microelectronics industry. This is discussed from a system perspective for on‐chip optical interconnects.

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“…En este caso el contacto de tira del chip tiene un ancho (d) de 0.01 cm y un largo (L) de 0.05 cm, lo cual corresponde a unárea de 0.0005 cm 2 . La densidad corriente de umbral es muy alta comparada con la literatura contemporánea [17], esto se debe esencialmente a la calidad de los contactosóhmicos.…”

Section: Resultados Experimentalesunclassified

Dispositivo láser semiconductor con puntos cuánticos para emisión en el cercano infrarrojo

et al. 2018

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En este trabajo se reporta la fabricación de un dispositivo láser de semiconductores III-V de confinamiento separado. La heteroestructura se creció usando la técnica de epitaxia por haces moleculares y se caracterizóóptica, topográfica y eléctricamente por medio de fotoluminiscencia, microscopia de tunelamiento, electroluminiscencia, relaciones de corriente-voltaje y corriente-potencia, respectivamente. El confinamiento electrónico es llevado a cabo por un emparedamiento delárea activa con pozos cuánticos de InGaAs con una composición que permite un acople estructural entre el pozo cuántico y los puntos cuánticos autoensamblados de InAs disminuyendo las dislocaciones que darían lugar a una mala calidad del dispositivo. El objetivo es obtener una emisión láser en las ventanas de menor absorción de las fibraś opticas situadas en el cercano infrarrojo en las que se basan los sistemas de telecomunicación. Descriptores: Puntos cuánticos; dispositivos semiconductores; epitaxia por haces moleculares; láser. In this work the fabrication of III-V semiconductor laser device with separate confinement is reported. The heterostructure was grown by molecular beam epitaxy technique and it was characterized by optical, morphological and electrical techniques such as photoluminescence, scanning tunneling effect, electroluminescence, current-voltage and current-power relations, respectively. The electronic confinement was carried out by sandwiching the active area with InGaAs quantum well with an appropriated Indium composition that allows a structural coupling between quantum wells and self-assembled InAs quantum dots decreasing dislocations that could commit the device quality. Our aim is to obtain the laser emission in the lower absorption windows for optical fiber telecommunications systems located in the near-infrared.

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13 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

Cited by 38 publications

References 20 publications

Optical Biosensors Based on Silicon-On-Insulator Ring Resonators: A Review

Optical Biosensors Based on Silicon-On-Insulator Ring Resonators: A Review

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Dispositivo láser semiconductor con puntos cuánticos para emisión en el cercano infrarrojo

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