130 nm-technology, 0.25 ¿m&lt;sup&gt;2&lt;/sup&gt;, 1T1C FRAM Cell for SoC (System-on-a-Chip)-friendly Applications

Hong, Young Ki; Jung, Dong-Hoon; Kang, Seong-Hoon; Kim, H.S.; Jung, Jean; Koh, Hyun-Woo; Park, Jai Hyung; Choi, Donghyun; Kim, S.E.; Ann, Wooram; Kang, Y.M.; Kim, J.-H.; Jung, Woniun; Lee, E.S.; Lee, S.Y.; Jeong, Hae-Yong; Kim, Kinam

doi:10.1109/vlsit.2007.4339704

Cited by 17 publications

(10 citation statements)

References 1 publication

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“…In summary, most of the recent work on FeRAM seems to address embedded memory applications [40,41] building on the strengths of FeRAM (CMOS compatibility, low-power, and low-voltage operation) and avoiding its weaknesses (difficulty in scaling to ultrasmall cell size). On the other hand, FeRAM is one of the most commercially successful new NVM alternatives, having been used in the Sony PlayStation ** 2 system [32].…”

Section: Figurementioning

confidence: 99%

Overview of candidate device technologies for storage-class memory

et al. 2008

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Storage-class memory (SCM) combines the benefits of a solidstate memory, such as high performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Such a device would require a solid-state nonvolatile memory technology that could be manufactured at an extremely high effective areal density using some combination of sublithographic patterning techniques, multiple bits per cell, and multiple layers of devices. We review the candidate solid-state nonvolatile memory technologies that potentially could be used to construct such an SCM. We discuss evolutionary extensions of conventional flash memory, such as SONOS (silicon-oxide-nitrideoxide-silicon) and nanotraps, as well as a number of revolutionary new memory technologies. We review the capabilities of ferroelectric, magnetic, phase-change, and resistive random-access memories, including perovskites and solid electrolytes, and finally organic and polymeric memory. The potential for practical scaling to ultrahigh effective areal density for each of these candidate technologies is then compared.

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Section: Figurementioning

confidence: 99%

Overview of candidate device technologies for storage-class memory

et al. 2008

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“…In the past decades, FeFET did not perform well in all these aspects includes low voltage requirements for memory operation, process step's simplicity, and minimally complementary metal-oxide-semiconductor (CMOS) integration process and limited contamination concerns [8][9][10][11]. To address this, recently, tremendous investigation on 2D FeFET nonvolatile memory (NVM) has been performed based on various ferroelectric materials, including PbZrTiO 3 (PZT), and [P(VDF-TrFE)] polymer [12][13][14][15][16][17][18], which is due to the promising properties of 2D material in "more than Moore era."…”

Section: Introductionmentioning

confidence: 99%

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

et al. 2020

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Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf 1-x Zr x O 2 (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the fewlayered molybdenum disulfide (MoS 2) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 10 7 and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (10 3 cycles) and retention (10 4 s) properties are also demonstrated. Our results demonstrate that the HZO/MoS 2 ferroelectric memory transistor can achieve new opportunities in size-and voltage-scalable non-volatile memory applications.

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“…Although FeRAM has been extensively investigated for more than 60 years, 1 it has still been restricted to a tiny niche in the memory market. This is because the state-of-the-art FeRAM is based on perovskite ferroelectrics, such as Pb(Zr,Ti)O 3 (PZT) 2 and SrBi 2 Ta 2 O 9 (SBT), 3 which suffer from the issues including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. The CMOS-compatibility issue complicates the integration of perovskite ferroelectrics and related electrodes into the CMOS platform, which adds to the cost of manufacturing and processing.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the ferroelectricity in HfO 2 can be preserved even when the film thickness is reduced to only $ 10 nm 4 ; thus endowing HfO 2 superior scalability for high-density FeRAM. As simultaneously being CMOS-compatible and highly scalable, HfO 2 and its analogous ferroelectric materials 5,6 have quickly become a hot research topic in both academic and industry communities for their great potential in FeRAM applications. More recently, based on ferroelectric HfO 2 , both the onetransistor (1T) FeRAM at the 28 nm node 7 and the onetransistor-one-capacitor (1T-1C) FeRAM with 3D deep trench capacitors 8 have been successfully developed, which will undoubtedly boost the research and development of HfO 2 -based materials and devices.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric HfO₂-based materials for next-generation ferroelectric memories

2016

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Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O 3 and SrBi 2 Ta 2 O 9 , has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Nextgeneration cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO 2 thin films in 2011, HfO 2 -based materials have aroused widespread interest in the field of FeRAM, because they are CMOScompatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO 2 -based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

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130 nm-technology, 0.25 ¿m<sup>2</sup>, 1T1C FRAM Cell for SoC (System-on-a-Chip)-friendly Applications

Cited by 17 publications

References 1 publication

Overview of candidate device technologies for storage-class memory

Overview of candidate device technologies for storage-class memory

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Ferroelectric HfO₂-based materials for next-generation ferroelectric memories

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130 nm-technology, 0.25 ¿m<sup>2</sup>, 1T1C FRAM Cell for SoC (System-on-a-Chip)-friendly Applications

Cited by 17 publications

References 1 publication

Overview of candidate device technologies for storage-class memory

Overview of candidate device technologies for storage-class memory

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Ferroelectric HfO2-based materials for next-generation ferroelectric memories

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Ferroelectric HfO₂-based materials for next-generation ferroelectric memories