140 GHz indium phosphide Gunn diode

Crowley, J. D.; Hang, Connie; Dalrymple, R.E.; Tringali, Dominic; Fank, F.B.; Wandinger, L.; Wallace, H. Bruce

doi:10.1049/el:19940358

Cited by 25 publications

(7 citation statements)

References 4 publications

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“…The measured data are plotted along with theoretical curves with zero compensation ratio. 6 These results are comparable to or better than reported results from vapor phase epitaxy ͑VPE͒ and metal-organic chemical vapor device ͑MOCVD͒ films. 7,8 The reproducibility of Si doping control in GSMBE grown InP is also studied.…”

Section: Resultssupporting

confidence: 92%

Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications

Franklin¹,

Kuo²,

Liu³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Resultssupporting

confidence: 92%

Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications

Franklin¹,

Kuo²,

Liu³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…12, which compares state-of-the-art-results from GaAs and InP Gunn devices on integral heat sinks with those from devices on diamond heat sinks. Figure 13 compares the estimated (22) heat-flow resistances of W-band (75-110 GHz) and D-band (110-170 GHz) InP Gunn devices on integral and diamond heat sinks as well as some measured values for devices on integral heat sinks (23)(24)(25). Examples of how significantly diamond heat sinks improve the RF performance of both GaAs and InP Gunn devices are provided in the sections on device structures.…”

Section: Device Packages Oscillator Circuits and Rf Performancementioning

confidence: 99%

Gunn or Transferred‐Electron Devices

Eisele

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Transferred‐electron devices are the only microwave devices whose operation is solely based on the bulk‐material properties of semiconductors such as GaAs or InP. These devices are mainly employed in low‐noise medium‐power oscillators up to high millimeter‐wave frequencies. James B. Gunn was the first scientist to observe the underlying physical phenomenon in an experiment and, therefore, these devices are often referred to as Gunn devices. This chapter describes the principles of operation, basic fabrication technologies, and common oscillator circuits for them. Different device structures for performance optimization, optimization procedures, and simulation tools are discussed. The chapter also summarizes the current state of the art of Gunn devices and the outlook covers the prospects of more recent device structures and material systems.

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“…Heat removal can be accomplished by packaging the device with an integrated heatsink [7]- [9]. The heat sink should be positioned close to the heat-generating active semiconductor layers of the device.…”

Section: High-power Devicesmentioning

confidence: 99%

A solder-free interconnect approach for integrating millimeter wave high-power devices with planar circuitry

Choudhury

Lawyer

Foschaar

et al. 2003

IEEE Trans. Adv. Packag.

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The development of commercial millimeter wave systems requires cost-effective, high-performance device/circuit assembly techniques. A solder-free thermosonic bonding approach is described here to integrate millimeter wave high-power devices with associated planar circuitry. The devices with integrated heatsink are attached to a metal block, and then ribbon bonded with planar millimeter-wave transmission line circuitry using the developed solder-free thermosonic bonding process. The assembly process is designed to minimize the stresses that damage the devices, while maintaining the bond integrity. Observations confirm that the introduction of ultrasonic energy into the bonding process significantly reduces the temperature and assembly force applied to the device. The effects of different assembly parameters on the performance of the device are also presented.Index Terms-Device/circuit interconnect, high-power devices, millimeter wave assembly, planar circuit, thermosonic bonding.

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140 GHz indium phosphide Gunn diode

Cited by 25 publications

References 4 publications

Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications

Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications

Gunn or Transferred‐Electron Devices

A solder-free interconnect approach for integrating millimeter wave high-power devices with planar circuitry

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