15.2: 2.0 inch a-Si:H TFT-LCD with Low Noise Integrated Gate Driver

Oh, Jae Hwan; Hur, Ji Ho; Son, Young Duck; Kim, Kyu Man; Kim, Se Hwan; Kim, Eun Hyun; Choi, Jae Won; Hong, Soo Min; Kim, Jin O.; Bae, Byung Seong; Jang, Jin

doi:10.1889/1.2036604

Cited by 31 publications

(20 citation statements)

References 1 publication

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“…The LSP signal discharges the M‐node and the G‐VST signal discharges the Q‐node. The Q‐node and the Qb‐node are designed with an improved circuit structure to reduce the leakage current because of the negative shift of Vth …”

Section: Operation Of Gip Circuitmentioning

confidence: 99%

Integrated gate driver circuit technology with IGZO TFT for sensing operation

Kim¹,

Noh²,

Ban³

et al. 2019

J Soc Info Display

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In this paper, we propose a new integrated gate driver circuit for random sensing operation of external compensated organic light‐emitting diode (OLED) display using oxide thin‐film transistor (TFT). Using this technology, we successfully launched 55‐inch and 65‐inch ultrahigh definition OLED TVs with gate in panel (GIP) circuit. The structure of the existing OLED TVs implemented gate signals through the gate integrated circuits (ICs) attached to the left and right sides of the panel. The structure using the gate IC was inferior to the panel structure using the GIP in terms of process and product design and cost. Thus, we propose a new oxide GIP circuit for OLED TV. Like the previous gate IC model, the proposed GIP circuit successfully implemented the random sensing function during the display operation. This GIP circuit is also designed to overcome the problems caused by the negative Vth characteristics of the oxide device.

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Section: Operation Of Gip Circuitmentioning

confidence: 99%

Integrated gate driver circuit technology with IGZO TFT for sensing operation

Kim¹,

Noh²,

Ban³

et al. 2019

J Soc Info Display

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“…Therefore, Qb[n] has to be low and Qh[n] should be higher than Qb[n] to turn T2 of depletion mode off completely for two scanning periods, which enables the operation in the low operating frequency. In addition, for the other time period, the discharging path from Q[n] to VGL2 is required through T2 to cope with fluctuation problems caused by clock coupling noises from CLK to Q[n] [14]. The discharging control block is implemented as shown in Fig.…”

Section: Operation Of Proposed Circuitmentioning

confidence: 99%

Depletion Mode Oxide TFT Shift Register for Variable Frame Rate AMOLED Displays

Song

Kang²,

Han³

et al. 2015

IEEE Electron Device Lett.

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This letter demonstrates a shift register circuit at the backplane of depletion mode oxide thin-film transistors (TFTs), which can cover variable frame rates for low-power active matrix organic light emitting diode (AMOLED) displays. The proposed scheme focuses on the stable gate control of a pull-up TFT by securing the charging and discharging paths at the wide operating frequency range. In a prototype high-definition (HD: 1366 × 768) AMOLED panel, it is ensured that fabricated shift registers operate at the wide frame frequency range from 1 to 240 Hz. The measured current consumptions are 30, 4, 6, and 5.8 mA for four clock signals, VGH of 24 V, VGL1 of −6 V, and VGL2 of −14 V at a frame rate of 120 Hz.Index Terms-Depletion mode, oxide TFT, shift register, variable frame rate.

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“…Hydrogenated amorphous silicon (a‐Si:H) is widely used in active‐matrix liquid‐crystal displays (LCDs) and peripheral driver circuits because it has high uniformity and low cost of the fabrication. Recently, the integration of gate drivers with the a‐Si:H TFTs on glass substrates provides many advantages, including improvement on compactness and reliability, reduction in the cost by eliminating external driver integrated circuits (ICs) and related bonding connections, and simplification of data driver configuration …”

Section: Introductionmentioning

confidence: 99%

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

2018

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A hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) gate driver with multioutputs (eight outputs per stage) for high reliability, 10.7‐inch automotive display has been proposed. The driver circuit is composed of one SR controller, eight driving TFTs (one stage to eight outputs) with bridging TFTs. The SR controller, which starts up the driving TFTs, could also prevent the noise of gate line for nonworking period. The bridging TFT, using width decreasing which connects between the SR controller and the driving TFT, could produce the floating state which is beneficial to couple the gate voltage, improves the driving ability of output, and reaches consistent rising time in high temperature and low temperature environment. Moreover, 8‐phase clocks with 75% overlapping and dual‐side driving scheme are also used in the circuit design to ensure enough charging time and reduce the loading of each gate line. According to lifetime test results, the proposed gate driver of 720 stages pass the extreme temperature range test (90°C and −40°C) for simulation, and operates stably over 800 hours at 90°C for measurement. Besides, this design is successfully demonstrated in a 10.7‐inch full HD (1080 × RGB×1920) TFT‐liquid‐crystal display (LCD) panel.

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15.2: 2.0 inch a-Si:H TFT-LCD with Low Noise Integrated Gate Driver

Cited by 31 publications

References 1 publication

Integrated gate driver circuit technology with IGZO TFT for sensing operation

Integrated gate driver circuit technology with IGZO TFT for sensing operation

Depletion Mode Oxide TFT Shift Register for Variable Frame Rate AMOLED Displays

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

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