We developed a 2.0 inch, QCIF (160×128×RGB), a-Si:H TFT-LCD with a low noise gate driver integrated on glass substrate. By simulation and measurement, the proposed gate driver was found to be noise-free compared to conventional one. A new gate driver can make it possible to perform operation regardless of the voltage coupling from other voltage sources.

We studied the effect of mechanical and electrical stresses on the performance of an hydrogenated amorphous silicon ͑a-Si:H͒ thin-film transistor ͑TFT͒ adopting an organic layer as the first gate insulator on plastic. The TFT with the maximum deposition temperature of 150°C exhibited a field-effect mobility of 0.4 cm 2 /Vs and a threshold voltage of 1.5 V and the leakage current of less than 10 Ϫ14 A/m. The individual transistors were strained by inward ͑compression͒ or outward ͑tension͒ cylindrical bending with parallel to the source-drain current path. The TFT performance was approximately unchanged until the strain was Ϯ1%. The mobility had a linear relationship with strain near the flat region, which appeared to be due to the change in the disorder by bending. The bias-stress effect on the TFT performance depended on the strain induced on the a-Si:H by mechanical bending.There is an increasing demand of displays based on plastic instead of glass substrate. The potential advantages of using plastic include lighter weight, thinner, and reduced incidence of breakage. Recently, a portable communication system is spotlighted and thus there is of increasing interest on the display devices on foldable plastic substrate. 1 The use of plastic will enable a new product concept such as curved flexible displays. 2 The advantages of plastic substrates compare to glass are greater flexibility and reduced sensitivity to flaws and defects.The hydrogenated amorphous silicon ͑a-Si:H͒ thin-film transistor ͑TFT͒ has been widely used as switching device of large-area electronics such as active-matrix liquid-crystal displays ͑AM-LCDs͒. Because of the thermal stress due to the difference of coefficient of thermal expansion ͑CTE͒ between plastic and inorganic layers (a-Si:H,SiN x ), the substrate is bent considerably or the inorganic film deposited on plastic can be peeled off the substrate. 3 The fabrication of device on plastic should be done at low temperatures because of the low heat resistance of plastic substrate. Then, the properties of the a-Si:H and SiN x films for TFTs deposited at low temperatures are worse than those deposited at conventional process temperature ͑250-350°C͒ on glass substrate. 4 He and/or H 2 dilution can be used to improve the material properties of the films deposited at low temperatures ͑Ͻ150°C͒. 5 Besides these, the shrinkage and elongation by gas permeation through the plastic is a big issue. Okada et al. used a novel plastic substrate having low thermal expansion coefficient and large Young's module and developed a reflective type color TFT-LCD on it. 6 The TFT on plastic with a field-effect mobility of Ͼ0.4 cm 2 /Vs and leakage current of Ͻ10 Ϫ14 A/m has been fabricated and TFT performance was measured under the mechanical stress induced by bending the TFT on plastic along the source-drain direction and also under gate bias stress. The mobility increases by tensile strain to a-Si:H and the bias-stress effect on the TFT performance depends on the curvature of the plastic.We used a back-channel-etch...

We have developed a 4.1 inch AMOLED display with top emission structure on stainless steel foil. The p-channel TFTs on metal foil exhibited the field-effect mobility of 75.1 cm 2 /Vs, threshold voltage of -3.9V, and subthreshold swing of 0.9V/dec. Active-matrix back planes were fabricated with the poly-Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 cap. The scan driver circuits with PMOS were integrated on the metal foil.

Jang (2011) Highly stable amorphous indium-gallium-zinc-oxide thin-film transistor using an etch-stopper and a viahole structure,

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