Highly stable amorphous indium–gallium–zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure

Mativenga, Mallory; Choi, Jae Won; Hur, Ji Ho; Kim, H. J.; Jang, Jin

doi:10.1080/15980316.2011.563058

Cited by 46 publications

(15 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For instance, it is a common practice to use SiO 2 rather than SiN x as a gate insulator or passivation material for a-IGZO TFTs because SiO 2 forms less interface trap densities with a-IGZO compared with SiN x [5], [17]. The TFTs with SiO 2 gate insulators and/or passivation have thus been reported to show good stability under positive bias stress (PBS) [18] or negative bias stress [19]. However, the investigation of long-term environmental stability of the SiO 2 passivated TFTs under harsh conditions, such as high humidity, are required to understand the lifetime of the devices.…”

mentioning

confidence: 99%

Effect of SiO2 and SiO2/SiN<italic>x</italic> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Chowdhury

Mativenga

et al. 2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO 2 ) and bilayer (SiO 2 /SiN x ) passivation under high-humidity (80%) storage. During the 30 days of investigation, all single-layer passivated TFTs showed negative turn-ON voltage shifts ( V ON ), the size of which increased with storing time. The negative V ON is attributed to donor generation inside the active a-IGZO caused by the diffusion of ambient hydrogen/water molecules passing through the SiO 2 passivation layer. The X-ray photoelectron spectroscopy depth profile for the SiO 2 passivated structures confirms that the concentration of oxygen vacancies, which is initially larger at the a-IGZO/SiO 2 interface, compared with the bulk a-IGZO, decreases after 30 days of storage under high humidity. This can be explained as the passivation of oxygen vacancies by diffused hydrogen. On the other hand, all bilayer passivated TFTs showed good air stability at room temperature and high humidity (80%).Index Terms-Amorphous-indium-gallium zinc oxide (a-IGZO), oxide thin-film transistors (TFT) reliability, SiO 2 and SiN x passivation layer, TFT.

show abstract

mentioning

confidence: 99%

Effect of SiO2 and SiO2/SiN<italic>x</italic> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Chowdhury

Mativenga

et al. 2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…PBS is known to induce positive V ON shift ( V ON ) in a-IGZO TFTs. The V ON is often attributed entirely to electron trapping (without defect formation) in the bulk semiconductor, at the semiconductor/gate insulator interface, or into the gate insulator [14], [15]. In any case, trapped charge screen the applied vertical field, thereby reducing the effective applied V GS and, hence, the positive V ON .…”

Section: Reliability Of Homojunction A-igzo Tftsmentioning

confidence: 99%

High-Performance Homojunction a-IGZO TFTs With Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes

Lee

Jin

et al. 2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

We report high-performance homojunction amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with low-resistive a-IGZO source/drain (S/D) electrodes. The a-IGZO S/D electrodes are selectively treated with high-power NF 3 plasma, which reduces their resistivity from ∼16 to 5.5×10 −3 · cm. X-ray photoelectron spectroscopy indicates an increase in weakly bonded oxygen and a substantial amount of indium-fluorine and zinc-fluorine bonds at the a-IGZO top surface (extending to ∼7 nm into the bulk) after plasma treatment. Temperature-dependent conductivity measurements show metallic behavior of the a-IGZO after treatment. It is concluded that fluorine atoms substitute for oxygen atoms-generating free electrons in the process and/or occupy oxygen vacancy sites-eliminating electron trap sites. As a result, the homojunction TFTs show good ON-state characteristics with typical field-effect mobility, subthreshold gate-voltage swing, and turn-ON voltage of 19 ± 1 cm 2 /V · s, 178 ± 30 mV/decade, and −3.2 ± 1.5 V, respectively. Good stability at high temperature and under bias and light stress are also exhibited by the homojunction TFTs, verifying a stable doping effect by the NF 3 plasma treatment. IndexTerms-Amorphous-indium-gallium-zinc-oxide (a-IGZO), fluorine, homojunction, thin-film transistor (TFT).

show abstract

“…The most popular TFT structure for AMOLED backplanes is the inverted staggered structure with an etch stopper [16]. But ES TFT has higher parasitic capacitance between gate and source/drain electrodes.…”

Section: Oxide Tft Backplanementioning

confidence: 99%

3.1: Invited Paper: Oxide Versus LTPS TFTs for Active‐Matrix Displays

Mativenga

Geng

Jang

2014

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

We have reviewed the comparison of LTPS and Oxide TFTs for AMOLED backplane application. The device performance and stability of ELA based LTPS TFTs are excellent even though the process cost is much higher than that of oxide TFTs. Oxide TFTs, on the other hand, can be manufactured with lost cost and the device performance is good enough for large-area AMOLED backplane. However, run-to-run reproducibility and bias stability of oxide TFTs are much inferior to those of their LTPS counterparts. We propose the bulk accumulation mode oxide TFTs for AMOLED backplane. The advantages of this technology are excellent uniformity and high driving ability as compared with conventional oxide TFTs.

show abstract

Highly stable amorphous indium–gallium–zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure

Abstract: Jang (2011) Highly stable amorphous indium-gallium-zinc-oxide thin-film transistor using an etch-stopper and a viahole structure,

Cited by 46 publications

References 13 publications

Effect of SiO<sub>2</sub> and SiO<sub>2</sub>/SiN<sub><italic>x</italic></sub> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Effect of SiO<sub>2</sub> and SiO<sub>2</sub>/SiN<sub><italic>x</italic></sub> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

High-Performance Homojunction a-IGZO TFTs With Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes

3.1: Invited Paper: Oxide Versus LTPS TFTs for Active‐Matrix Displays

Contact Info

Product

Resources

About