3.1: Invited Paper: Oxide Versus LTPS TFTs for Active‐Matrix Displays

Abstract

We have reviewed the comparison of LTPS and Oxide TFTs for AMOLED backplane application. The device performance and stability of ELA based LTPS TFTs are excellent even though the process cost is much higher than that of oxide TFTs. Oxide TFTs, on the other hand, can be manufactured with lost cost and the device performance is good enough for large-area AMOLED backplane. However, run-to-run reproducibility and bias stability of oxide TFTs are much inferior to those of their LTPS counterparts. We propose the bulk accumulation mode oxide TFTs for AMOLED backplane. The advantages of this technology are excellent uniformity and high driving ability as compared with conventional oxide TFTs.

Novel LTPS technology for large substrate

“…Hence, there are only a few mass production factories of large panel. In contrast, a lot of studies have reported about improving photo‐stability, such as c‐axis‐aligned crystal‐indium gallium zinc oxide and dual gate …”

“…In contrast, a lot of studies have reported about improving photo-stability, such as c-axis-aligned crystal-indium gallium zinc oxide 7-9 and dual gate. 10 In light of these issues, we developed PLAS for novel laser annealing technology, which had the mobility of 28.1 cm 2 /Vs larger than that of mass produced oxide TFT and photo-stability comparable with that of LTPS TFT in bottom gate structure. This innovative technology enables the conversion from an α-Si TFT to a high-mobility TFT most easily and inexpensively.…”

P‐43: New Active Multiplexer Driving for Large‐Sized NMOS LTPS TFT Display

“…Low temperature poly silicon (LTPS) technology and amorphous type TFT is the two mainstream backplane for LCD driving. Recent years, the IGZO TFT backplane technology had been developed very rapidly [1]. Compare with amorphous type, LTPS well known has high mobility, anti-stress ability and smaller size layout space [2].…”

7-4: AMOLED Pixel Circuit using Dual Gate a-IGZO TFTs for Simple Scheme and High Speed VTHExtraction

“…Amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been considered as good candidate for active-matrix organic light-emitting diode (AMOLED) pixel circuit since they can be made using a relatively simple process and have high mobility and transparent characteristics [1][2][3]. However, because their reliability still has some problems, the compensated pixel circuit is mandatory for AMOLED panel [4][5][6].…”