15.4: Excellent Performance of Indium‐Oxide‐Based Thin‐Film Transistors by DC Sputtering

Lee, Ming‐Hsien; Shih, Chih‐Cheng; Chen, Jim‐Shone; Huang, Weiming; Gan, Fengyuan; Shih, Yi-Chi; Qiu, Chun; Shih, I.

doi:10.1889/1.3256729

Cited by 17 publications

(8 citation statements)

References 8 publications

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“…Since 2010, a-Si:H based thin film devices have been actively replaced with either lowtemperature polysilicon (LTPS) which offers higher mobility but suffers from non-homogeneity 6,7 or amorphous metaloxide based TFTs for large area applications such as display backplanes. Over the past decade, metal oxide semiconductors have been studied intensively and used in many thin-film based devices [8][9][10][11][12][13] . In case of polycrystalline single metal oxide semiconductors, such as ZnO, SnO 2 , In 2 O 3 , Ga 2 O 3 etc., the conduction band is made of large overlapping s-orbitals of metal cations (with electronic configuration (n-1)d 10 ns 0 ).…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

Srivastava

Nahas

Bhowmick

et al. 2019

Journal of Applied Physics

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Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO) has been researched extensively and is now being used in commercial applications. It is proposed in the literature that overlapping In-5s orbitals form the conduction path and the carrier mobility is limited due to the presence of multiple cations which create a potential barrier for the electronic transport in a-IGZO semiconductors. A multi-anion approach towards amorphous semiconductors has been suggested to overcome this limitation and has been shown to achieve hall mobilities up to an order of magnitude higher compared to multi-cation amorphous semiconductors. In the present work, we compare the electronic structure and electronic transport in a multi-cation amorphous semiconductor, a-IGZO and a multi-anion amorphous semiconductor, a-ZnON using computational methods. Our results show that in a-IGZO, the carrier transport path is through the overlap of outer s-orbitals of mixed cations and in a-ZnON, the transport path is formed by the overlap of Zn-4s orbitals, which is the only type of metal cation present. We also show that for multi-component ionic amorphous semiconductors, electron transport can be explained in terms of orbital overlap integral which can be calculated from structural information and has a direct correlation with the carrier effective mass which is calculated using computationally expensive first principle DFT methods.arXiv:1812.11333v3 [cond-mat.mtrl-sci]

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Section: Introductionmentioning

confidence: 99%

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

Srivastava

Nahas

Bhowmick

et al. 2019

Journal of Applied Physics

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“…Amorphous-oxide-semiconductors (AOS) have been recognized materials for active layer in thin-film transistors (TFTs) mounted in display backplanes due to their inherent amorphous properties, which are closely related to their high device-to-device uniformity. , Among AOS types, the amorphous In–Ga–Zn-O (a-IGZO) is one of the most promising materials in the current display industry because of its sufficient mobility (10–30 cm 2 /(V s)), − low off-state current, low process temperature, process compatibility with conventional poly silicon TFTs, and wide bandgap (3–3.05 eV). , Particularly, the wide bandgap promotes high transparency of TFTs in the visible range. However, for future display applications, the reliability of a-IGZO TFTs that work in harsh conditions of outdoor places with elevated temperatures and high illumination levels becomes increasingly important.…”

Section: Introductionmentioning

confidence: 99%

Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)

Kim

Lee

et al. 2016

ACS Appl. Mater. Interfaces

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An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of the ETA method was experimentally demonstrated with transparent amorphous In-Ga-Zn-O (a-IGZO) TFTs. The overall electrical performance metrics were boosted by the proposed method: up to 205% for the trans-conductance (gm), 158% for the linear current (Ilinear), and 206% for the subthreshold swing (SS). The performance enhancement were interpreted by X-ray photoelectron microscopy (XPS), showing a reduction of oxygen vacancies in a-IGZO after the ETA. Furthermore, by virtue of the extremely short operation time (80 ns) of ETA, which neither provokes a delay of the mandatory TFTs operation such as addressing operation for the display refresh nor demands extra physical treatment, the semipermanent use of displays can be realized.

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“…LCDs, 5,6 OLED displays, 7,8 and flexible OLED displays 9 have been reported to use such oxide semiconductors. Previous reports on the characteristics of a TFT having the BGBC structure 10 and reports related to the effect of forming a passivation layer 11 have been made. However, this tim e, we have recently developed am orphous In-Ga-Zn-oxide TFTs having bottom-gate bottom-contact (BGBC) structures and examined the optimal process including a step of forming a passivation layer over the ac-tive layer.…”

Section: Introductionmentioning

confidence: 99%

Driver‐circuits‐integrated LCDs based on novel amorphous In‐Ga‐Zn‐oxide TFT

Osada¹,

Akimoto²,

Sato³

et al. 2010

J Soc Info Display

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Abstract— A liquid‐crystal panel integrated with a gate driver and a source driver by using amorphous In—Ga—Zn‐oxide TFTs was designed, prototyped, and evaluated. By using the process of bottom‐gate bottom‐contact (BGBC) TFTs, amorphous In—Ga—Zn‐oxide TFTs with superior characteristics were provided. Further, for the first time in the world, a 4‐in. QVGA liquid‐crystal panel integrated with a gate driver and a source driver was developed by using BGBC TFTs formed from an oxide semiconductor. By evaluating the liquid‐crystal panel, its functionality was successfully demonstrate. Based on the findings, it is believed that the novel BGBC amorphous In—Ga—Zn‐oxide TFT will be a promising candidate for future large‐screen backplanes having high definition.

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15.4: Excellent Performance of Indium‐Oxide‐Based Thin‐Film Transistors by DC Sputtering

Cited by 17 publications

References 8 publications

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)

Driver‐circuits‐integrated LCDs based on novel amorphous In‐Ga‐Zn‐oxide TFT

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