Modification of ethyl alcohol added aqueous electrolyte for depositing calcium phosphate on titanium substrates by a electrocrystallization method is described. Film coated in the electrolyte with ethyl alcohol addition is more homogeneous and the growth rate is higher. The optimum quantity of ethyl alcohol added is 50% of the electrolyte. Although the pH value of electrolyte varies as ethyl alcohol is added, the phases of the deposited film remain the same, and are hydroxyapatite and brushite. The development of the microstructure of the coated film during deposition is discussed.
Results on indium‐oxide‐based transparent oxide TFTs, which the active layer is prepared by DC sputtering, are presented. The fabricated TOS TFTs show high mobility (37 cm2/V‐s), high ON/OFF current ratio and large on‐state current. Fabricating oxide TFTs on temperature‐sensitive substrates is also attainable owing to the low temperature process of the active layer preparation.
This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxidenitride-oxide-silicon structure under OFF-state stress. During the electrical stress, the hot hole generated from band-to-band tunneling process will inject into gate dielectric, and the significant ON-state degradation (more than 1 order) indicates that the interface states are accompanied with hot-hole injection. In addition, the asymmetric I-V characteristics indicate that the interface states are located near the drain side. Moreover, the ISE-TCAD simulation tool was utilized to model the degradation mechanism and analyze trap states distribution. Although both the vertical and lateral electrical fields are factors for degradation and hothole injection, the degradation is mainly affected by the lateral electrical field over a critical point.
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