15-μm 128×128 GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetector focal plane array camera

Gunapala, Sarath D.; Park, J.S.; Sarusi, Gabby; Lin, T. L.; Liu, J.K.; Maker, P. D.; Muller, Richard E.; Shott, C. A.; Hoelter, Theodore R.

doi:10.1109/16.554790

Cited by 73 publications

(19 citation statements)

References 8 publications

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“…Among the different types of QWIPs, GaAs/AlGaAs QW detectors are the most mature due to the almost perfect natural lattice match between GaAs and AlGaAs [42][43][44][45][46][47][48][49][50][51][52][53][54]. GaAs/AlGaAs QW devices have many advantages, including their ability to be used with standard GaAsbased manufacturing techniques and processing technologies, highly uniform and well-controlled molecular beam epitaxy growth on six-inch GaAs wafers, high yield and thus low cost, more thermal stability, and extrinsic radiation hardness.…”

Section: Intersubband Qwipmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional lowdimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced lightmatter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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Section: Intersubband Qwipmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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“…Spectral data is acquired by means of a grating spectrometer and cooled (55 °K to 65 °K) Quantum Well Infrared Photodetector (QWIP) arrays [2]. These devices demonstrate extremely uniform response, exhibit low 1/f noise, are defect free, reproducible, low cost, and readily lend themselves to two-dimensional arrays.…”

Section: Vlw1r Focal Plane: Specifications and Design Challengesmentioning

confidence: 99%

<title>High dynamic range low-noise focal plane readout for VLWIR applications implemented with current mode background subtraction</title>

et al. 1998

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Design and operation of a low noise CMOS focal plane readout circuit with ultra-high charge handling capacity is presented. Designed for high-background, VLWIR detector readout, each readout unit cell uses an accurate dynamic current memory for automatic subtraction of the dark pedestal in current domain enabling measurement of small signals 85dB below the dark level. The readout circuit operates with low-power dissipation, high linearity, and is capable of handling pedestal currents up to 300 nA. Measurements indicate an effective charge handling capacity of over 5x109 charges/pixel with less than iO electrons of input referred noise.

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“…Intersubband absorption in quantum wells(QW's) is an important mechanism for the detection of mid-and longwavelength infrared radiation [1][2][3]. It is conventionally observed in QW infrared photodetectors (QWIPs) which are multi-QW structures with unipolar contacts.…”

Section: Introductionmentioning

confidence: 99%

Intersubband absorption based upon modulation doped transistor heterostructures

Yao¹,

Zheng²,

Opper³

et al. 2010

SPIE Proceedings

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Intersubband absorption is reported in a new modulation doped structure using strained InGaAs quantum wells (QWs) that support transistor operation. Well defined absorption peaks (1000 cm -1 to 1700 cm -1 ) from 8μm to 11.5μm have been obtained using either n-or p-type modulation doped wells. The absorption wavelength may be extended to as low as 3.2µm by using quantum dots placed within the quantum well. Both n and p well responses show strong polarization dependence with maximum values at incident angles of 65-70º and peak positions which are adjusted by the quantum well parameters. The p well shows a double peaked response with a peak separation of about 1.5μm which results from heavy and light hole contributions. A thyristor infrared detector model has been established based upon the intersubband absorption mechanism and simulation results are shown.

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15-μm 128×128 GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetector focal plane array camera

Cited by 73 publications

References 8 publications

Emerging technologies for high performance infrared detectors

Emerging technologies for high performance infrared detectors

<title>High dynamic range low-noise focal plane readout for VLWIR applications implemented with current mode background subtraction</title>

Intersubband absorption based upon modulation doped transistor heterostructures

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