16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers

Guo, Zhanzhi; Lu, Liangjun; Zhou, Linjie; Shen, Lin; Chen, Jianping

doi:10.1109/jlt.2017.2751562

Cited by 65 publications

(29 citation statements)

References 33 publications

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“…Now, the start-of-art silicon photonic EO switch has 1.2 ns switching time, and can operate up to 32 inputs and 32 outputs [251]. Another consideration is the combination of EO and TO [252]. EO is used for fast switching operation and TO can be used for device alignment.…”

Section: Photonic Switchmentioning

confidence: 99%

On-chip silicon photonic signaling and processing: a review

2018

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Section: Photonic Switchmentioning

confidence: 99%

On-chip silicon photonic signaling and processing: a review

2018

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“…13(a). The switches can be based on broadband MZIs [94][95][96] or wavelength-selective ringassisted MZIs [97,98] . A unique input-output optical path can be established upon setting the state of each switch element.…”

Section: Multi-path Switchable Delay Linesmentioning

confidence: 99%

Integrated optical delay lines: a review and perspective [Invited]

Zhou

Wang

et al. 2018

Chin. Opt. Lett.

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Optical delay lines (ODLs) are one of the key enabling components in photonic integrated circuits and systems. They are widely used in time-division multiplexing, optical signal synchronization and buffering, microwave signal processing, beam forming and steering, etc. The development of integrated photonics pushes forward the miniaturization of ODLs, offering improved performances in terms of stability, tuning speed, and power consumption. The integrated ODLs can be implemented using various structures, such as single or coupled resonators, gratings, photonic crystals, multi-path switchable structures, and recirculating loop structures. The delay tuning in ODLs is enabled by either changing the group refractive index of the waveguide or changing the length of the optical path. This paper reviews the recent development of integrated ODLs with a focus on their abundant applications and flexible implementations. The challenges and potentials of each type of ODLs are pointed out.

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“…Silicon photonics has the advantages of compact size due to its large refractive index contrast, and low cost for the complementary metal-oxide-semiconductor (CMOS) compatible manufacturing processes, which are favorable for large-scale optical switches. Various silicon optical switch metrics with different actuation methods and switch elements have been demonstrated, such as micro-electro-mechanical system (MEMS) actuated crossbar switches [5]- [7], thermo-optic (TO) Mach-Zehnder interferometer (MZI) switches [8]- [11], TO micro-ring based switches [12]- [15], electro-optic (EO) MZI switches [16]- [19], EO dual-ring-assisted MZI switches [20], [21], etc. Typically, the switching speed of MEMS and TO based optical switches is in the order of microseconds, while EO actuated switches based on the free-carrier dispersion effect have a faster response time of nanoseconds.…”

Section: Introductionmentioning

confidence: 99%

“…However, most of the proposed optical switches are demonstrated with only one switching actuator. Although several reported optical switches are integrated with both TO and EO phase shifters in the chip, the TO phase shifters are just used for phase compensation from fabrication errors [17], [21], [23]. It still brings extra loss due to EO switching, which is not the optimal solution for the applications like optical-circuit switching.…”

Section: Introductionmentioning

confidence: 99%

Silicon Non-Blocking 4 × 4 Optical Switch Chip Integrated With Both Thermal and Electro-Optic Tuners

Gao

et al. 2019

IEEE Photonics J.

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We experimentally demonstrate an integrated strictly non-blocking silicon 4 × 4 optical switch chip that can be operated in both thermo-optic (TO) and electro-optic (EO) switching modes. It is based on the double-layer network (DLN) architecture and consists of twelve 2 × 2 Mach-Zehnder interferometer (MZI) switch elements. TO phase shifters based on TiN microheaters and EO phase shifters based on p-in diodes are embedded in both waveguide arms of the MZI elements. The power consumption for TO and EO switching is 34 mW/π and 7 mW/π, respectively. The on-chip insertion losses are 1.74 ± 0.59 dB and 3.79 dB ± 1.32 dB for TO and EO switching, respectively. Due to the merits of the DLN architecture and the optimized performance of the switch elements, the chip possesses low crosstalk of −29.1 dB and −19.4 dB for TO and EO switching, respectively. Quadrature phase-shift keying (QPSK) optical signals with a data rate of 64 Gb/s are transmitted through the switch with no observable deteriorations. Such an optical switch is a promising candidate for both optical circuit switching and optical packet switching for a variety of applications.

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16 × 16 Silicon Optical Switch Based on Dual-Ring-Assisted Mach–Zehnder Interferometers

Cited by 65 publications

References 33 publications

On-chip silicon photonic signaling and processing: a review

On-chip silicon photonic signaling and processing: a review

Integrated optical delay lines: a review and perspective [Invited]

Silicon Non-Blocking 4 × 4 Optical Switch Chip Integrated With Both Thermal and Electro-Optic Tuners

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