16.5 DynaPlasia: An eDRAM In-Memory-Computing-Based Reconfigurable Spatial Accelerator with Triple-Mode Cell for Dynamic Resource Switching

Li, Zhiyong; Um, Soyeon; Jo, Wooyoung; Ha, Sangwoo; Lee, Juhyoung; Kim, Sangjin; Han, Donghyeon; Yoo, Hoi‐Jun

doi:10.1109/isscc42615.2023.10067352

Cited by 21 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4(f-i) shows the 1T-1C/2T-1C/3T-1C/4T-2C eDRAM cells from [28,29,30,31], respectively. The above eDRAM cells store the weights on the internal capacitor and perform similar computations like SRAM cells in currentbased [28,29,30] or charge-based [31] approaches. Its dynamic feature reduces the transistor counts and enables multi-bit storage on the dynamic node [30,6].…”

Section: Volume mentioning

confidence: 99%

See 1 more Smart Citation

A Survey of Computing-in-Memory Processor: From Circuit to Application

Sun,

Yue,

et al. 2024

IEEE Open J. Solid-State Circuits Soc.

View full text Add to dashboard Cite

The computing-in-memory (CIM) technique is emerging with the evolvement of big data and artificial intelligence (AI) application. The manuscript presents a systematic review of existing CIM works in a bottom-up view from circuit to application. Various types of CIM circuits based on different volatile/non-volatile devices are introduced. The micro CIM architectures are illustrated to support multibit precision computation. After that, several types of processor-level CIM chips are analyzed to reveal the system architecture design considerations. The corresponding CIM tool chains and applications beyond AI applications are also introduced. From circuit to application levels, this manuscript analyzes the design trade-offs, remained challenges and possible future design trends at different design hierarchies of CIM processors.INDEX TERMS Computing-in-memory (CIM), CIM processor, Circuit-level CIM cells, CIM micro architecture, CIM tool chains, CIM applications

show abstract

Section: Volume mentioning

confidence: 99%

“…FIGURE 4. Different types of volatile CIM cells: (a) 6T SRAM cell [4], (b) 8T SRAM cell [25], (c) 8T-1C SRAM cell [26], (d) 9T-1C SRAM cell [8], (e) 10T-2C SRAM cell [27], (f) 1T-1C eDRAM cell [28], (g) 2T-1C eDRAM cell [29], (h) 3T-1C eDRAM cell[30] and (i) 4T-2C eDRAM cell [31]. …”

mentioning

confidence: 99%