1985
DOI: 10.1109/t-ed.1985.22165
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160 × 244 Element PtSi Schottky-barrier IR-CCD image sensor

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Cited by 131 publications
(41 citation statements)
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“…The general concept of thin SBD with optical cavity was first described in 1973 by Archer and Cohen for SBDs in the form of Au on p-type Si (Archer & Cohen, 1973). The improved PtSi SBD structure was further developed and from 1980 to 1985 the fabrication process for PtSi SBDs was optimized at Sarnoff with the development of 32×63, 64×128 and 160×244 IR-CCD FPAs Kosonocky, 1985). Similar PtSi SBDs characteristics were also reported in the same years by Mitsubishi Corporation, Fujitsu, NEC, EG&G Reticon, Hughes, Loral Fairchild and Kodak.…”
Section: Infrared Devices For Imaging Applicationmentioning
confidence: 70%
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“…The general concept of thin SBD with optical cavity was first described in 1973 by Archer and Cohen for SBDs in the form of Au on p-type Si (Archer & Cohen, 1973). The improved PtSi SBD structure was further developed and from 1980 to 1985 the fabrication process for PtSi SBDs was optimized at Sarnoff with the development of 32×63, 64×128 and 160×244 IR-CCD FPAs Kosonocky, 1985). Similar PtSi SBDs characteristics were also reported in the same years by Mitsubishi Corporation, Fujitsu, NEC, EG&G Reticon, Hughes, Loral Fairchild and Kodak.…”
Section: Infrared Devices For Imaging Applicationmentioning
confidence: 70%
“…In this paragraph, we go into more depth on photodetectors based on the internal photoemission effect (IPE). Silicon infrared photodiodes based on IPE are not novel, in fact PtSi/p-Si, Ir/p-Si and Pd 2 Si/p-Si junctions are usually used in the infrared imaging systems (Kosonocky et al, 1985). The main advantages of these devices resides in their extremely high switching speed and in their simple fabrication process, but, due to high background current density these devices can only work at cryogenic temperature.…”
Section: Introductionmentioning
confidence: 99%
“…long by 6-ptm-wide surface channel CCD transfer region between the SBD and the BCCD readout register. The operation of the SCCD channel-stop regions into accumulation ensures an operational blooming control mode of the SBD's, provided the BCCD readout register has a sufficient charge-handlin" .zapacity [13].…”
Section: Evaluation Of Design and Process Alternativesmentioning
confidence: 99%
“…The technique for formation of the SBD's has been described previously [13]. For the TA14804A 320 x 244-element FPA's, a thin (approximately 14-A) layer of platinum was deposited on the wafers and annealed to form a layer of PtSi in the SBD regions.…”
Section: Schoitky-barrier-detector Formationmentioning
confidence: 99%
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