18.2 A Monolithic E-Mode GaN 15W 400V Offline Self-Supplied Hysteretic Buck Converter with 95.6% Efficiency

Kaufmann, Maik Peter; Lueders, Michael; Kaya, C.; Wicht, Bernhard

doi:10.1109/isscc19947.2020.9063102

Cited by 43 publications

(6 citation statements)

References 8 publications

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“…1. This technology is similar to the technologies from [4,7,10,12,13]. The technology is the basis for the development of the active and passive devices, shown in the section III.…”

Section: Introductionmentioning

confidence: 99%

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Building Blocks for GaN Power Integration

Basler¹,

Reiner

Moench

et al. 2021

IEEE Access

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GaN technology is on the advance for the use in power ICs thanks to space-saving integrated circuit components and the increasing number of integrated devices. This work experimentally investigates a number of key building blocks for GaN power integration. First, an overview of the active and passives devices of the technology is given with focus on area-efficient layouts for power transistors and limitations of on-chip capacitors and inductors with comparison to other IC technologies. Digital and analog basic circuits as part of device libraries are examined and optimized with regard to area-efficiency. The NOT gates have active areas as low as 56.7 µm 2 and max. static currents of 0.12 mA with high noise margins. Further digital gates are presented. For the analog circuits, differential amplifiers and voltage reference concepts are presented and compared. Finally, GaN power integration is discussed, and integration levels are defined and described. The GaN technology is compared with other IC technologies, and future challenges and perspectives are shown. GaN power integration based on building blocks aims to exploit the full potential of the lateral GaN technology in order to compete with Si-based IC technologies in the future.INDEX TERMS Gallium nitride, integrated circuit technology, power integrated circuits, logic circuits, analog circuits

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“…1. This technology is similar to the technologies from [4,7,10,12,13]. The technology is the basis for the development of the active and passive devices, shown in the section III.…”

Section: Introductionmentioning

confidence: 99%

“…There are already several GaN-on-Si technologies based on the AlGaN/GaN high electron mobility transistor (HEMT) with p-GaN or MIS gate [4][5][6][7][8][9][10][11][12][13] for GaN power integration. In addition, technologies with Silicon-on-Insulator (SOI) substrates are available as multi-project wafer [14].…”

Section: Introductionmentioning

confidence: 99%

Building Blocks for GaN Power Integration

Basler¹,

Reiner

Moench

et al. 2021

IEEE Access

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“…However, the construction of logic units based on such device technologies still faces major challenges. In many cases, GaN-based ICs are purely built by n-channel FETs [11][12][13], which are naturally conductive and require additional gate controls and complex gate drivers to reduce static power consumption. Therefore, 1 These authors contributed equally to this work.…”

Section: Introductionmentioning

confidence: 99%

GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels

Xing,

Zhang,

et al. 2024

J. Phys. D: Appl. Phys.

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Herein, a novel enhancement-mode (E-mode) GaN-based p-channel FETs (p-FETs) with a linearly graded AlGaN (LGA) p-channel is proposed and numerically studied by Silvaco TCAD. Thanks to strong polarization-induced doping, three-dimensional hole gas (3DHG) can be uniformly generated in LGA to form a continuous p-channel with a hole concentration over 1018 cm–3. Combined with an optimized recessed gate structure, the LGA p-FET can simultaneously achieve a large threshold voltage (|V TH|) > 2 V and a high current density (|J DS|) of ∼10 mA mm−1 at V DS = −10 V. Additionally, two critical parameters of the LGA p-FETs, i.e. the depth of recessed gate and initial Al composition of LGA, are specifically studied to reveal the unique carrier behavior of 3DHG in the devices. Importantly, the LGA structure is further optimized and implemented as the p-type cap layer to construct an E-mode GaN n-FET. Thereby, based on the same LGA configuration, a GaN-based inverter with the matched complementary n- and p-FETs is monolithically constructed, showing sharp voltage transition. The reported novel LGA structure and its availability in both GaN-based E-mode n- and p-FETs provides valuable insights and guidance to construct highly efficient GaN p-type devices and All-GaN-based integrated circuits for compact power electronic systems.

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“…Recently, Wang et al reported the first GaN-based pulse width modulation integrated IC [6]. Besides, the fully integrated GaN driver and 650 V GaN power devices are also reported by Chen et al [7] and Kaufmann et al [8].…”

Section: Introductionmentioning

confidence: 99%

“…However, due to the lack of high-performance GaN p-channel devices, GaN monolithic integrated power chips only rely on n-type GaN devices so far [8,9]. Such an obstacle substantially restrains GaN IC design diversity and the circuits functionality as well as the performance of GaN power ICs.…”

Section: Introductionmentioning

confidence: 99%

A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density

Chen

Ruan

et al. 2022

J. Phys. D: Appl. Phys.

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In this work, a trench gate enhancement-mode (E-mode) GaN p-type Metal Oxide Semiconductor Field Effect Transistor featuring charge storage layer is proposed, which exhibits an effectively improved current density. Compared with conventional devices without charge storage layer, the current density can be increased by 154% (@VDS=-5V, VGS=-7V). Besides, the simulation has been conducted to obtain the optimized AlGaN barrier thickness t, Al mole-fraction x, trench gate depth Trecess, and negative charge concentration NCSL. In this case, the p-MOSFETs show an on-current |ION, max| of 14 mA/mm, VTH of -0.47 V, ION/IOFF of >108, and on-resistance RON of 0.27 kΩ.mm. The proposed GaN p-MOSFETs exhibit a promising method to improve the current drive capability of GaN p-channel devices.

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18.2 A Monolithic E-Mode GaN 15W 400V Offline Self-Supplied Hysteretic Buck Converter with 95.6% Efficiency

Cited by 43 publications

References 8 publications

Building Blocks for GaN Power Integration

Building Blocks for GaN Power Integration

GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels

A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density

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