In this work, a trench gate enhancement-mode (E-mode) GaN p-type Metal Oxide Semiconductor Field Effect Transistor featuring charge storage layer is proposed, which exhibits an effectively improved current density. Compared with conventional devices without charge storage layer, the current density can be increased by 154% (@VDS=-5V, VGS=-7V). Besides, the simulation has been conducted to obtain the optimized AlGaN barrier thickness t, Al mole-fraction x, trench gate depth Trecess, and negative charge concentration NCSL. In this case, the p-MOSFETs show an on-current |ION, max| of 14 mA/mm, VTH of -0.47 V, ION/IOFF of >108, and on-resistance RON of 0.27 kΩ.mm. The proposed GaN p-MOSFETs exhibit a promising method to improve the current drive capability of GaN p-channel devices.

No abstract

No abstract

No abstract