High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and <i>In Situ</i> Si₃N₄-Cap Passivation

Zhu, Liyang; Zhou, Qi; Yang, Xin; Lei, Jiacheng; Chen, Kuangli; Luo, Zundu; Huang, Peng; Zhou, Chunhua; Chen, Kevin J.; Zhang, Bo

doi:10.1109/ted.2020.3018416

Cited by 11 publications

(2 citation statements)

References 31 publications

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“…Utilization the of InGaN polarization enhancement layer helped to supplement 2DEG under the field plate, simultaneously reduced the distance between the field plate and the current channel, and the breakdown voltage (more than 250 V) of the device is significantly increased compared to conventional structures. In 2020, Zhu et al [52] combined the field plate with a hybrid anode structure and successfully fabricated an AlGaN/GaN heterojunction SBD with a turn-on voltage of 0.31 V and a breakdown voltage of 976 V. Moreover, the leakage current was less than 1 µA mm −1 and the onresistance was 7.09 Ω•mm at a high temperature of 200 • C, as shown in figure 4(d). In 2021, Kang et al [53] proposed a field plate termination without recessed-anode structure for AlGaN/GaN heterojunction SBD, as shown in figure 4(e).…”

Section: Field Plate Terminationmentioning

confidence: 99%

Research progress and prospect of GaN Schottky diodes

Shao,

Zhang,

et al. 2023

J. Phys. D: Appl. Phys.

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GaN (gallium nitride), as a third-generation semiconductor (wide-band semiconductor) material, is widely used in the fabrication of power devices with an excessive breakdown voltage and a low on-resistance due to the material’s excellent properties. Starting from the three basic structures, this paper analyses and summarizes the research progress of GaN SBD (schottky barrier diode) in recent years. The design and optimization methods of GaN-based SBD are introduced from various aspects, such as anode structure, termination type, epitaxial structure and substrate. The advantages and disadvantages of GaN-based SBD of different structures and the problems in the research process are summarized, and the future application fields of GaN-based SBD devices are prospected.

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Section: Field Plate Terminationmentioning

confidence: 99%

Research progress and prospect of GaN Schottky diodes

Shao,

Zhang,

et al. 2023

J. Phys. D: Appl. Phys.

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“…Up to present, none of the demonstrated semiconductor diodes are able to operate at 0 V turn-on with low power loss. [7][8][9][10][11][12][13][14][15] Though a synchronous rectification circuit can be employed for turning on the device at 0 V, the additional power drive and increased cost offset its benefits.…”

Section: Introductionmentioning

confidence: 99%

Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

Zhang¹,

Kawata²,

Iwata³

2021

Jpn. J. Appl. Phys.

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We have demonstrated an extremely low voltage rectifier by using p-GaN gate AlGaN/GaN high electron mobility transistors. In contrast to conventional GaN rectifiers, the turn-on voltage and on-state current can be decoupled, resulting in low turn-on voltage of 0.05 V and high on-state current achieved simultaneously with p-GaN designs. Furthermore, the role of p-GaN layer on current–voltage characteristics of p-GaN gated anode diode was investigated, indicating the p-GaN layer is the source of hole current. Combined the electron current with hole current, the total current was enhanced significantly with the ohmic p-GaN gate electrode. Finally, full-wave AC to DC rectification was demonstrated by a monolithically-integrated diode bridge rectifier with four p-GaN gated anode diodes. The bridge rectifier is able to operate at an input signal as low as 0.18 V, which is very promising for future power conversion applications.

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Low turn-on voltage AlGaN/GaN Schottky barrier diode with a low work function anode and high work function field plate

Shi,

Li,

et al. 2024

Applied Physics Letters

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AlGaN/GaN Schottky barrier diodes (SBDs) with a low work function W anode and a high work function Ni field plate on sapphire substrates are investigated in this Letter. The low work function metal W leads to the low turn-on voltage, while the high work function metal Ni maintains the leakage current and increases the breakdown voltage. An ultralow turn-on voltage of 0.23 V determined by the positive fixed charge at the AlGaN/Si3N4 interface is achieved in this W/Ni SBD. More importantly, benefitting from the dual-metal anode/field plate structure, the on-resistance decreases from 7.99 to 5.53 Ω mm, and the breakdown voltage increases from 493 to 1219 V. In addition, the turn-on voltage decreases less than 57%, and the on-resistance increases less than 186% at a high temperature up to 120 °C. The W/Ni SBD with a cathode–anode length of 18 μm and a field plate length of 4 μm shows a low turn-on voltage of 0.23 V, a low on-resistance of 5.53 Ω mm, a leakage current of 0.65 mA/mm, and a high breakdown voltage of 1.21 kV, indicating a great potential for power electronic applications.

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High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation

Cited by 11 publications

References 31 publications

Research progress and prospect of GaN Schottky diodes

Research progress and prospect of GaN Schottky diodes

Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

Low turn-on voltage AlGaN/GaN Schottky barrier diode with a low work function anode and high work function field plate

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