Tri-Gated Hybrid Anode AlGaN/GaN Power Diode With Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current

Zhou, Qi; Chen, Kuangli; Huang, Peng; Han, Xiaoqi; Xiong, Wei; Chen, Wanjun; Zhang, Bo

doi:10.1109/ted.2020.2971384

Cited by 8 publications

(2 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the actual power applications, the AlGaN/GaN power diode plays the role of a lateral field-effect rectifier (LFER) [2,3]. In recent years, several high-performance LFERs are proposed, including various Schottky barrier diodes (SBDs) [4][5][6][7] and hybrid anode diodes (HADs) [3,8]. For the SBD devices, the anode Schottky (Sch.)…”

Section: Introductionmentioning

confidence: 99%

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

Wang¹,

Chen²,

Wang³

et al. 2021

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

In this paper, we designed a low turn-on voltage (V On) AlGaN/GaN lateral field-effect rectifier (LFER) compatible with p-GaN gate high-electron-mobility transistor (HEMT) technology (PG-LFER). We also established an analytical model on the gated control two-dimensional-electron-gas density (n S) distributions and V On to investigate the underlying mechanism. The designed PG-LFER features a p-GaN charge storage layer (CSL) under the anode terminal. Net negative charge density in the p-GaN CSL (σ p-GaN) is associated with the activated doping concentration of p-GaN CSL (N p-GaN) and p-GaN CSL thickness (t p-GaN). V On of the PG-LFER is significantly lowered due to the low σ p-GaN caused by reducing the N p-GaN and t p-GaN. Meanwhile, the low V On PG-LFER also preserves recognizable reverse blocking and capacitance characteristics. Verified by the calibrated simulation, the designed PG-LFER shows 70% lower V On compared with the non-optimized LFER with a high σ p-GaN. Compatible with p-GaN gate HEMT technology, the designed PG-LFER with improved performance is a promising candidate for power integrated applications.

show abstract

Section: Introductionmentioning

confidence: 99%

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

Wang¹,

Chen²,

Wang³

et al. 2021

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…In recent years, the properties of wide-bandgap (WBG) materials, especially Gallium Nitride (GaN), have gained a lot of attention for high-power, high-frequency, and high-temperature application in the power and microwave range, because of large bandgap, high breakdown electric field, and high mobility two-dimension electron gas (2DEG) [1,2,3,4,5]. A p-type doped GaN layer is covered locally under the gate in order to achieve enough high threshold voltage with a low specific on-resistance [6,7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Liu

et al. 2020

IEICE Electron. Express

View full text Add to dashboard Cite

In this work, the thermal effect in the dynamic on-resistance (R on) degradation of normally-off p-GaN AlGaN/GaN HEMTs on SiC substrates has been analyzed using pulse-mode voltage stress. Compare to the significant degradation characteristics of GaN-on-Si HEMTs, a suppressed dynamic R on degradation is achieved in GaN-on-SiC due to higher thermal boundary conduction with less ionized acceptor-like buffer traps. Different electrical characteristics have been discussed to reveal the traps mechanisms related to thermal effect. Finally, two-dimension device simulation has been carried out to probe the physical insight into the thermal effect on the dynamic R on degradation.

show abstract

Design of multi-channel AlGaN/GaN Schottky diode for improving rectification efficiency in microwave power transmission

Xiao

Zhang

et al. 2023

Micro and Nanostructures

View full text Add to dashboard Cite

Tri-Gated Hybrid Anode AlGaN/GaN Power Diode With Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current

Cited by 8 publications

References 20 publications

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Design of multi-channel AlGaN/GaN Schottky diode for improving rectification efficiency in microwave power transmission

Contact Info

Product

Resources

About