18 kW three phase inverter system using hermetically sealed SiC phase-leg power modules

Zhang, Hui; Tolbert, Leon M.; Han, Jung Hee; Chinthavali, Madhu; Barlow, F.

doi:10.1109/apec.2010.5433365

Cited by 39 publications

(16 citation statements)

References 12 publications

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“…9, which is composed of three phase-leg modules (three SiC JFETs in parallel and one antiparalleled diode) [29]. The efficiency of this inverter obtained from simulations is compared to that from experiments in Fig.…”

Section: Modeling and Validationmentioning

confidence: 99%

Impact of SiC Devices on Hybrid Electric and Plug-In Hybrid Electric Vehicles

Zhang

Tolbert

Ozpineci

2011

IEEE Trans. on Ind. Applicat.

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223

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The application of silicon carbide (SiC) devices as battery interface, motor controller, etc., in a hybrid electric vehicle (HEV) will be beneficial due to their high-temperature capability, high-power density, and high efficiency. Moreover, the light weight and small volume will affect the whole powertrain system in a HEV and, thus, the performance and cost. In this paper, the performance of HEVs is analyzed using the vehicle simulation software Powertrain System Analysis Toolkit (PSAT). Power loss models of a SiC inverter based on the test results of latest SiC devices are incorporated into PSAT powertrain models in order to study the impact of SiC devices on HEVs from a system standpoint and give a direct correlation between the inverter efficiency and weight and the vehicle's fuel economy. Two types of HEVs are considered. One is the 2004 Toyota Prius HEV, and the other is a plug-in HEV (PHEV), whose powertrain architecture is the same as that of the 2004 Toyota Prius HEV. The vehicle-level benefits from the introduction of SiC devices are demonstrated by simulations. Not only the power loss in the motor controller but also those in other components in the vehicle powertrain are reduced. As a result, the system efficiency is improved, and vehicles that incorporate SiC power electronics are predicted to consume less energy and have lower emissions and improved system compactness with a simplified thermal management system. For the PHEV, the benefits are even more distinct; in particular, the size of the battery bank can be reduced for optimum design.Index Terms-Efficiency, hybrid electric vehicle (HEV), inverter, plug-in HEV (PHEV), Powertrain System Analysis Toolkit (PSAT), silicon carbide (SiC).

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Section: Modeling and Validationmentioning

confidence: 99%

Impact of SiC Devices on Hybrid Electric and Plug-In Hybrid Electric Vehicles

Zhang

Tolbert

Ozpineci

2011

IEEE Trans. on Ind. Applicat.

Self Cite

223

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“…The modeling and characterization of SiC JFETs, and their system applications have been reported in several papers [7][8][9][10][11][12][13]. Several SiC JFET and SiC diode based power modules have been presented [14][15][16]. In high power applications, power devices are often used in parallel in order to achieve a higher current rating.…”

Section: Introductionmentioning

confidence: 99%

“…The performance of the individual SiC JFET during paralleling operation in the module has been studied in [17]. A SiC JFET and SiC Schottky Barrier Diode (SBD) based phase-leg power module has been developed at 200 °C and used in a 18 kW three-phase inverter system in [16]. Reference [18] describes a 250 °C SiC power module containing eight SiC MOSFETs in parallel per switching element.…”

Section: Introductionmentioning

confidence: 99%

Characterization of a high temperature multichip SiC JFET-based module

Jiang

Wang

et al. 2011

2011 IEEE Energy Conversion Congress and Exposition

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This paper presents a SiC JFET-based, 200 °C, 50 kW three-phase inverter module and evaluates its electrical performance. With 1200 V, 100 A rating of the module, each switching element is composed of four paralleled SiC JFETs with two anti-parallel SiC Shottky Barrier Diodes (SBDs). The substrate layout inside the module is designed to reduce package parasitics. Then, experimental static characteristics of the module are obtained over a wide range of temperature, and low on-state resistance is shown up to 200 °C. The dynamic performance of this module is evaluated by double pulse test up to 150 °C, under 650 V dc bus voltage and 60 A drain current, with different turn-on and turn-off gate resistances. The current unbalance phenomenon and phase-leg shootthrough problem are analyzed too. The results by simulation and experiments show that the causes of shoot-through are JFET inside parameters, package parasitics, and high temperature. The switching losses of this module at different temperatures are shown at the end.

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“…Silicon carbide (SiC) devices are the most popular wideband-gap devices in recent years [1]- [6]. Lower loss is generally regarded as one of the most significant advantages of SiC semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

“…Most of the recently developed SiC power modules are with single device as switches, and the current rating is limited [1]- [3]. What is more, the gate driver's influence on switching waveform is seldom discussed.…”

Section: Introductionmentioning

confidence: 99%

Experimental study of power module with SiC devices

Jiang¹,

Xu²,

Wang³

et al. 2011

2011 IEEE Energy Conversion Congress and Exposition

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This paper studies the performance of a newly designed 1200V/60A three-phase SiC power module based on parallel SiC JFETs and diodes. The conduction and the switching performance are tested from room temperature to 150 0 C. The switching speed of the module increases when temperature rises. In the switching performance test, the gate driver speed could bring false peak in turn-off waveform. The experimental results show that the false peak is cause by Differential-mode (DM) noises but not Common-mode (CM) noises. Finally the losses and efficiency of this power module are evaluated.

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18 kW three phase inverter system using hermetically sealed SiC phase-leg power modules

Cited by 39 publications

References 12 publications

Impact of SiC Devices on Hybrid Electric and Plug-In Hybrid Electric Vehicles

Impact of SiC Devices on Hybrid Electric and Plug-In Hybrid Electric Vehicles

Characterization of a high temperature multichip SiC JFET-based module

Experimental study of power module with SiC devices

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