No abstract

With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. Research on SiC power electronics has shown their higher efficiency compared to Si power electronics due to significantly lower conduction and switching losses. This paper focuses on the development of a high power module based on SiC JFETs and Schottky diodes. Characterization of a single device, a module developed using the same device, and finally an inverter built using the modules is presented. When tested at moderate load levels compared to the inverter rating, an efficiency of 98.2% was achieved by the initial prototype.Index Terms-Silicon Carbide, JFET, inverter, efficiency, hybrid electric vehicle, HEV, PHEV.I.