19·9%‐efficient ZnO/CdS/CuInGaSe<sup>2</sup> solar cell with 81·2% fill factor

Repins, Ingrid; Contreras, Miguel Á.; Egaas, Brian; DeHart, Clay; Scharf, John; Perkins, Craig L.; To, Bobby; Noufi, R.

doi:10.1002/pip.822

Cited by 2,003 publications

(1,103 citation statements)

References 13 publications

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“…A power meter that is sensitive to the ultraviolet light was put in a position of 1.5 cm above the solar cell, and a convex lens was put above the power meter. We observed that the power of solar irradiation I is related to the distance between the lens and the power meter y within the focal length in the form I = I0 + k (y) 2 , where I0 and k are constants. This relation allowed us to find the position of lens for a desired power density on the solar cell.…”

Section: J -V Measurementsmentioning

confidence: 99%

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Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions

Lee¹,

Chung²,

Park³

et al. 2010

Journal of the Optical Society of Korea

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We analyze the current density -voltage (J -V) curve of a Cu(In,Ga)Se2 (CIGS) thin-film solar cell measured at different irradiation power densities. For the solar-cell sample investigated in this study, the fill factor and power conversion efficiency decreased as the irradiation power density (IPD) increased in the range of 2 to 5 sun. Characteristic parameters of solar cell including the series resistance (rs), the shunt resistance (rsh), the photocurrent density (JL), the saturation current density (Js) of an ideal diode, and the coefficient (Cs) of the diode current due to electron-hole recombination via ionized traps at the p-n interface are determined from a theoretical fit to the experimental data of the J -V curve using a two-diode model. As IPD increased, both rs and rsh decreased, but Cs increased.

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Section: J -V Measurementsmentioning

confidence: 99%

“…Recently, the Cu(In,Ga)Se2 (CIGS) thin-film solar cell has been the subject of intensive research and development in the photovoltaic industry [1][2][3][4][5][6]. CIGS has a great potential for solar cells with high power-conversion efficiencies.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions

Lee¹,

Chung²,

Park³

et al. 2010

Journal of the Optical Society of Korea

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“…Now the most developed thin film photovoltaic technologies are based on CdTe and CuInSe 2 absorber layers. Recently a maximum efficiency of 19.9% has been achieved at National Renewable Energy Laboratory, United States of America, using Cu(In,Ga)Se 2 based absorber layers [1]. But these materials, due to the difficulty in maintaining stoichiometry, especially in large area films, alleged environmental hazards and high cost of indium are not beneficial in the longer run [2].…”

Section: Introductionmentioning

confidence: 99%

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

et al. 2010

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SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (N 10 5 /cm) were deposited at substrate temperature of 375°C. The role of substrate temperature in determining the optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the same substrate temperature of 375°C, which facilitates sequential deposition of SnS homojunction. A comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements. Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS 2 , Sn 2 S 3 were also determined.

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“…MOCVD is a reliable technique for the fabrication of high-efficiency solar cells [3], and solar cells with efficiencies between 10% and 19% can be obtained. More generally, efficiencies of the order of 20%, measured under the AM 1.5 global spectrum for 1000 W/m2 irradiance, have been achieved in the lab for epitaxially grown CuIn x Ga (1−x) Se 2 -based solar cells [4,5]. There are other methods to grow chalcopyrite thin films.…”

Section: Introductionmentioning

confidence: 99%

Atomic structure of the (001) surface of CuGaSe2

2012

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Hybrid exchange density functional theory is used to study the wide band gap chalcopyrite CuGaSe 2 .The formation energies of the experimentally observed (4×1) and (1×1) atomic scale reconstructions on the CuGaSe 2 (001) surface are calculated for different environmental conditions. The results suggest that a Serich (1×1) reconstruction, and a Cu-poor, Se-rich (4×1) reconstruction, are the only stable surfaces under all the studied environmental conditions. Two complementary mechanisms for the stabilisation of CuGaSe 2 surfaces are proposed, and it is suggested that the presence of Na stabilises the (4×1) reconstructions, making them the stable terminations under Na-rich conditions.

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19·9%‐efficient ZnO/CdS/CuInGaSe² solar cell with 81·2% fill factor

Cited by 2,003 publications

References 13 publications

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

Atomic structure of the (001) surface of CuGaSe2

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19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

Cited by 2,003 publications

References 13 publications

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se2 Thin-film Solar Cell Measured at Different Irradiation Conditions

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se2 Thin-film Solar Cell Measured at Different Irradiation Conditions

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

Atomic structure of the (001) surface of CuGaSe2

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19·9%‐efficient ZnO/CdS/CuInGaSe² solar cell with 81·2% fill factor

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions

Analysis of the Current-voltage Curves of a Cu(In,Ga)Se₂ Thin-film Solar Cell Measured at Different Irradiation Conditions