190 GHz InP HEMT MMIC LNA with dry etched backside vias

Barsky, M.; Lai, R.; Kok, Yon-Lin; Sholley, M.; Streit, D.C.; Block, Thomas; Liu, P.H.; Sabin, E.; Rogers, Howard; Медведев, В. В.; Gaier, T.; Samoska, Lorene

doi:10.1109/iciprm.1999.773723

Cited by 13 publications

(4 citation statements)

References 5 publications

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“…This particular device achieves an impressive peak transconductance of 1600 mS/mm, with a maximum oscillation frequency reaching 310 GHz. Such capabilities make this InP transistor highly suitable for integration into terahertz circuits, offering great promise for applications in the terahertz frequency range [9,10].…”

Section: Introductionmentioning

confidence: 99%

A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications

Hu,

Yang,

Fang

et al. 2023

Micromachines

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This paper proposes a low-noise amplifier (LNA) for terahertz communication systems. The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. At the same time, the use of staggered tuning technology has achieved a large bandwidth of terahertz low-noise amplification. In addition, capacitors are used for interstage isolation, sector lines are used for RF bypass, and Microstrip is used to design matching circuits. The entire LNA circuit was validated using accurate electromagnetic simulation. The simulation results show that at 140 GHz, the small signal gain is 25 dB, the noise figure is 4.4 dB, the input 1 dB compression point is −19 dBm, and the 3 dB bandwidth reaches 60 GHz (110–170 GHz), which validates the effectiveness of the design.

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Section: Introductionmentioning

confidence: 99%

A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications

Hu,

Yang,

Fang

et al. 2023

Micromachines

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“…Although they are used as baseband amplifiers, their operating frequency range is below 100 GHz. As for ultra high-frequency amplifiers such as F-band, [8][9][10][11] Gband, [12][13][14][15] H-band, [16][17][18][19][20] and beyond, [21][22][23] their bandwidths of more than 30 GHz were achieved. [14][15][16][17][18]20,22,23) However, their fractional bandwidths are at most 0.2.…”

Section: Introductionmentioning

confidence: 99%

“…As for ultra high-frequency amplifiers such as F-band, [8][9][10][11] Gband, [12][13][14][15] H-band, [16][17][18][19][20] and beyond, [21][22][23] their bandwidths of more than 30 GHz were achieved. [14][15][16][17][18]20,22,23) However, their fractional bandwidths are at most 0.2. 15) In particular, as summarized in Table I, few papers [8][9][10][11] have reported bandwidths of more than 10 GHz, and no papers reported bandwidths of more than 30 GHz.…”

Section: Introductionmentioning

confidence: 99%

93–133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology

Sato¹,

Shiba²,

Matsumura³

et al. 2013

Jpn. J. Appl. Phys.

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In this study, we developed a new type of high-frequency amplifier topology using 75-nm-gate-length InP-based high-electron-mobility transistors (InP HEMTs). To enhance the gain for a wide frequency range, a common-source common-gate hybrid amplifier topology was proposed. A transformer-based balun placed at the input of the amplifier generates differential signals, which are fed to the gate and source terminals of the transistor. The amplified signal is outputted at the drain node. The simulation results show that the hybrid topology exhibits a higher gain from 90 to 140 GHz than that of the conventional common-source or common-gate amplifier. The two-stage amplifier fabricated using the topology exhibits a small signal gain of 12 dB and a 3-dB bandwidth of 40 GHz (93–133 GHz), which is the largest bandwidth and the second highest gain reported among those of published 120-GHz-band amplifiers. In addition, the measured noise figure was 5 dB from 90 to 100 GHz.

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“…Switches with PIN diodes as active devices showed superior performance at mmwave frequencies [3], [4], [5], [SI and could furthermore be used for attenuators, limiters or phaseshifters. The InP-based HFETs demonstrated the lowest noise figures and high associated gains for the use in LNAs [7], [8] and could also be the active device in a mixer. In this paper a comparison of the performance of our InP-based and metamorphic HFET processes will be given and first results of the integration of the PIN diode and the HFET on one substrate will be presented.…”

Section: Introductionmentioning

confidence: 99%

InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems

Ziegler

Gassler²,

Wolk³

et al.

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)

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In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of the InP-based PIN diode and HFET on one InP-substrate. Using these two devices, we integrated three different MMIC designs on one wafer: SPDT switch, phaseshifter and a combination of SPDT switch and LNA for a multifunctional MMIC.

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190 GHz InP HEMT MMIC LNA with dry etched backside vias

Cited by 13 publications

References 5 publications

A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications

A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications

93–133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology

InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems

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