A complete solution of plane-wave scattering from a groove-corrugated surface of infinite extent for arbitrary incidence is presented. The electromagnetic wave is decomposed into fast and slow modal representation, and the solution is accomplished through the use of the mode-matching method. We solved for the zero-order diffraction efficiency and the phase of each polarization component for arbitrary incident angles. Our results have verified special cases previously published by others and have illustrated the phase shift between polarizations associated with the diffraction process as a function of the incident angles.

The boundary value techniques in vector-field diffraction theories are generalized to describe electromagnetic scattering of plane waves by a finite number of parallel, rectangular grooves corrugated on a metallic (infinitely conducting) ground plane. Each of the grooves has its own feature size and location for representing a general grating structure in multilevel binary optics. The multiple-scattering matrix is derived for determining the scattering coefficients that lead to a fast convergence in the Bessel-function series representation of the scattered-field angular spectrum. The solution remains stable from the long-wavelength (the Rayleigh limit) to the short-wavelength region (the geometrical optics limit). It is found that any N-groove scattered field can be treated as the sum of N single-groove radiation fields and the cross-groove coupling fields. A coupling index is introduced to measure the coupling effect. Numerical examples of two, six, and twelve grooves are examined in differentspectral regions. Plots of the coupling index are generated to show the feasibility of using pattern superposition for an approximate solution.

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We present the highest frequency performance of any solid-state monolithic microwave integrated circuit (MMIC) amplifier. A 2-stage 80-nm gate length InGaAs/InAlAs/InP HEMT MMIC balanced amplifier has a measured on-wafer peak gain of 7.2 dB at 190 GHz and greater than 5 dB gain from 170 to 194 GHz. The circuit was fabricated using a pseudomorphic 20-nm In 0:65 Ga 0:35 As channel HEMT structure grown on a 3-in InP substrate by MBE. Based on the measured circuit results, the intrinsic exhibits an F max greater than 400 GHz.