A 155-GHz monolithic low-noise amplifier

Wang, H.; Lai, R.; Kok, Yon-Lin; Huang, Tian-Wei; Aust, M.V.; Chen, Y.C.; Siegel, Peter H.; Gaier, T.; Dengler, Robert J.; Allen, B.

doi:10.1109/22.734551

Cited by 33 publications

(5 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…InP-based HEMTs with pseudomorphic channel are used for low noise applications at mm-wave frequencies such as passive imaging and radiometry [1] [2]. For application in systems long term reliability is imperative.…”

Section: (K8)mentioning

confidence: 99%

Reliability of passivated 0.15 /spl mu/m InAlAs-InGaAs HEMTs with pseudomorphic channel

Dammann

Chertouk²,

Jantz³

et al. 1999

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296)

View full text Add to dashboard Cite

Section: (K8)mentioning

confidence: 99%

Reliability of passivated 0.15 /spl mu/m InAlAs-InGaAs HEMTs with pseudomorphic channel

Dammann

Chertouk²,

Jantz³

et al. 1999

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296)

View full text Add to dashboard Cite

“…But can CMOS operate up to 100 GHz as RF transceivers? Presently, W-band (70-110 GHz), D-band (110-140 GHz), and G-band (140-220 GHz) RF circuits have been demonstrated only by III-V MMICs based on high-performance InP-InGaAs HEMTs or HBTs with cutoff frequencies of GHz and GHz [13], [14]. The and of today's 0.1-m CMOS are about 60 and 90 GHz, respectively [15].…”

Section: Electronic Overheadmentioning

confidence: 99%

RF/wireless interconnect for inter- and intra-chip communications

et al. 2001

View full text Add to dashboard Cite

Recent studies showed that conventional approaches being used to solve problems imposed by hard-wired metal interconnects will eventually encounter fundamental limits and may impede the advance of future ultralarge-scale integrated circuits (ULSIs). To surpass these fundamental limits, we introduce a novel RF/wireless interconnect concept for future inter-and intra-ULSI communications. Unlike the traditional "passive" metal interconnect, the "active" RF/wireless interconnect is based on low loss and dispersion-free microwave signal transmission, near-field capacitive coupling, and modern multiple-access algorithms. In this paper, we address issues relevant to the signal channeling of the RF/wireless interconnect and discuss its advantages in speed, signal integrity, and channel reconfiguration. The electronic overhead required in the RF/wireless-interconnect system and its compatibility with the future ULSI and MCM (multi-chip-module) will be discussed as well.

show abstract

“…By far the most challenging designs were the LNAs, and the best LNAs used in these modules represent the state of the art. [6][7][8] The key to realizing these designs at such high frequency and bandwidths is a precise model for the HEMT in the frequencies of interest, and after several iterations we have very good LNAs in both bands.…”

Section: Mmic Designmentioning

confidence: 99%

MMIC amplifier-based receivers for Earth remote sensing

Dawson

Gaier

Weinreb

et al. 2003

Passive Millimeter-Wave Imaging Technology VI and Radar Sensor Technology VII

View full text Add to dashboard Cite

We have developed amplifier based receivers using Indium Phosphide high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) technology. These compact receivers are designed with atmospheric temperature and humidity sounding requirements in mind, operating at 100-125 GHz around the 118 GHz oxygen line, and at 160-185GHz near the 183 GHz water line, with average noise temperatures of 1600 and 1200K respectively. They are intended for applications where small volume and power consumption are critical. We will present laboratory data on the noise temperature of these receivers operated at room temperature and preliminary field data.

show abstract

A 155-GHz monolithic low-noise amplifier

Cited by 33 publications

References 15 publications

Reliability of passivated 0.15 /spl mu/m InAlAs-InGaAs HEMTs with pseudomorphic channel

Reliability of passivated 0.15 /spl mu/m InAlAs-InGaAs HEMTs with pseudomorphic channel

RF/wireless interconnect for inter- and intra-chip communications

MMIC amplifier-based receivers for Earth remote sensing

Contact Info

Product

Resources

About