193 nm angle-resolved scatterfield microscope for semiconductor metrology

Sohn, Yeung Joon; Quintanilha, R.; Barnes, Brian M.; Silver, Richard M.

doi:10.1117/12.830683

Cited by 13 publications

(5 citation statements)

References 9 publications

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“…Theoretically, the scattering cross-section (SCS) of the defect is approximately proportional to d 6 /λ 4 , thus the scattering signal of the defects decreases with the shrinkage of defect size. Meanwhile, the scattering angles of the high diffraction orders from the background pattern will enlarge as the CD size shrinks [54]. Therefore, the SNR of the defect scattering signal will decrease with the shrinkage of defect size.…”

Section: Effect Of Topography On Defect Detectabilitymentioning

confidence: 99%

Optical wafer defect inspection at the 10 nm technology node and beyond

Zhu¹,

Liu²,

Xu³

et al. 2022

Int. J. Extrem. Manuf.

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The growing demand for electronic devices, smart devices, and the Internet of Things constitutes the primary driving force for marching down the path of decreased critical dimension and increased circuit intricacy of integrated circuits. However, as sub-10 nm high-volume manufacturing is becoming the mainstream, there is greater awareness that defects introduced by original equipment manufacturer components impact yield and manufacturing costs. The identification, positioning, and classification of these defects, including random particles and systematic defects, are becoming more and more challenging at the 10 nm node and beyond. Very recently, the combination of conventional optical defect inspection with emerging techniques such as nanophotonics, optical vortices, computational imaging, quantitative phase imaging, and deep learning is giving the field a new possibility. Hence, it is extremely necessary to make a thorough review for disclosing new perspectives and exciting trends, on the foundation of former great reviews in the field of defect inspection methods. In this article, we give a comprehensive review of the emerging topics in the past decade with a focus on three specific areas: (1) the defect detectability evaluation, (2) the diverse optical inspection systems, and (3) the post-processing algorithms. We hope, this work can be of importance to both new entrants in the field and people who are seeking to use it in interdisciplinary work.

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Section: Effect Of Topography On Defect Detectabilitymentioning

confidence: 99%

Optical wafer defect inspection at the 10 nm technology node and beyond

Zhu¹,

Liu²,

Xu³

et al. 2022

Int. J. Extrem. Manuf.

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“…Previously, direct comparison between the imperfectly patterned die and another well-pattered die was hampered by substantially different illumination conditions. In this experiment, "Bx" and " By" defects are measured on two dies on the 9 nm IDA using bright-field illumination using the NIST 193 nm Microscope [11]. The full-field effective illumination numerical aperture (NA) is annular due to a catadioptric objective and ranges from 0.12 NA to 0.74 NA.…”

Section: Comparison Of Dies On the Sematech 9 Nm Idamentioning

confidence: 99%

Optical volumetric inspection of sub-20nm patterned defects with wafer noise

et al. 2014

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We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focusresolved 2-D collected images into 3-D volumes of intensity information and also permits the use of multi-dimensional processing and thresholding techniques to enhance defect detectability. In this paper, the effects of wafer noise upon detectability using volumetric processing are assessed with both simulations and experiments using the SEMATECH 9 nm node intentional defect array. The potential extensibility and industrial application of this technique are evaluated.

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“…Recent studies by our group have shown increases sensitivity to CD by tailoring the partial coherence factor and aperture shape in the CBFP (31). Quadrupole and dipole illumination have also been explored for enhancing the optical response from pattered ECS Transactions, 92 (1) 73-84 (2019) samples (32,33). Second, instead of an annulus or slit, a single finite aperture can be used to produce a narrow cone of light at the sample (25).…”

Section: Scatterfield Microscopymentioning

confidence: 99%

Appraising the Extensibility of Optics-Based Metrology for Emerging Materials

Barnes¹,

Henn²,

Sohn³

et al. 2019

ECS Trans.

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To advance computational capabilities beyond conventional scaling limitations, novel device architectures enabled by emerging materials may be required. Optics-based methodologies, central to modern-day process control, will be pursued by the nanoelectronics industry to interrogate these devices as optics are inexpensive, nondestructive, and fast. As geometrical and material complexity define new metrology requirements, these should be considered relative to the broader challenge of perpetuating optical methods for deep-subwavelength features. Using examples from our group and from others, the tailoring of the illumination conditions, sample, collection path, and data analysis are emphasized for model-based quantitative measurements. The successful fitting of structures comprised from these emerging materials will require the accurate determination of material optical constants, which may be both thickness dependent and anisotropic. Atomistic models such as tight-binding calculations or density-functional theory are potential approaches for understanding the dielectric function of these materials.

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193 nm angle-resolved scatterfield microscope for semiconductor metrology

Cited by 13 publications

References 9 publications

Optical wafer defect inspection at the 10 nm technology node and beyond

Optical wafer defect inspection at the 10 nm technology node and beyond

Optical volumetric inspection of sub-20nm patterned defects with wafer noise

Appraising the Extensibility of Optics-Based Metrology for Emerging Materials

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