Optical microscopy is sensitive both to arrays of nanoscale features and to their imperfections. Optimizing scattered electromagnetic field intensities from deep sub-wavelength nanometer scale structures represents an important element of optical metrology. Current, well-established optical methods used to identify defects in semiconductor patterning are in jeopardy by upcoming sub-20 nm device dimensions. A novel volumetric analysis for processing focus-resolved images of defects is presented using simulated and experimental examples. This new method allows defects as narrow as (16 ± 2) nm (k = 1) to be revealed using 193 nm light with focus and illumination conditions optimized for three-dimensional data analysis. Quantitative metrics to compare two-dimensional and three-dimensional imaging indicate possible fourfold improvements in sensitivity using these methods.

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Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography, detection of the optical scattering from killer defects may be obscured by the scattering from other variations, called wafer noise. Understanding and separating these optical signals are critical to reduce false positives and overlooked defects. The effects of wafer noise on defect detection are assessed using volumetric processing on both measurements and simulations with the SEMATECH 9-nm gate intentional defect array. Increases in LER in simulation lead to decreases in signal-to-noise ratios due to wafer noise. Measurement procedures illustrate the potential uses in manufacturing while illustrating challenges to be overcome for full implementation. Highly geometry-dependent, the ratio of wafer noise to defect signal should continue to be evaluated for new process architectures and production nodes. Barnes et al.: Effects of wafer noise on the detection of 20-nm defects using optical volumetric inspection Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/08/2015 Terms of Use: http://spiedl.org/terms Barnes et al.: Effects of wafer noise on the detection of 20-nm defects using optical volumetric inspection Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/08/2015 Terms of Use: http://spiedl.org/terms Barnes et al.: Effects of wafer noise on the detection of 20-nm defects using optical volumetric inspection Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 06/08/2015 Terms of Use: http://spiedl.org/terms

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