1D-1D Coulomb Drag Signature of a Luttinger Liquid

Abstract

One-dimensional (1D) interacting electronic systems exhibit distinct properties when compared to their counterparts in higher dimensions. We report Coulomb drag measurements between vertically integrated quantum wires separated by a barrier only 15 nanometers wide. The temperature dependence of the drag resistance is measured in the true 1D regime where both wires have less than one 1D subband occupied. As a function of temperature, an upturn in the drag resistance is observed below a temperature T* ~ 1.6 kelvin. This crossover in Coulomb drag behavior is consistent with Tomonaga-Luttinger liquid models for the 1D-1D drag between quantum wires.

Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures

“…To search for signatures of correlations between the 2DEG in the GaAs quantum well and the 2D chiral hole fluid 39 in SLG or BLG, we measure the T dependence of the Coulomb drag resistance R D . Experimentally, the Coulomb drag is routinely used as a sensitive probe of strong correlations including transitions to the superconducting state 40 , metal-insulator transitions 41 and Luttinger liquid correlations 42 in quantum wires, and exciton condensation in quantum Hall bilayers 9 . In a Coulomb drag experiment 24,43,44 , a current source is connected to one of the two layers (the active or drive layer).…”

Coulomb drag

“…In the case of Coulomb interaction this scaling is different since D 3 ∝ T 5 . Coulomb drag between true 1D systems was recently observed by Laroche et al (2014) in a system of vertically integrated quantum wires where each wire has less than one 1D subband occupied. The most striking theoretical prediction, i.e., the upturn in the temperature dependence was revealed below the crossover temperature T * ∼ 1.6K, see Fig.…”

“…It is however well-known, that the Fermi-liquid theory fails for purely 1D systems, i.e. single-channel wires (Giamarchi, 2004), quasi-1D wires with single 1D subband occupancy (Laroche et al, 2014), and systems comprising a small number of coupled 1D channels. Coulomb drag between two Luttinger liquids with point-like interaction region was discussed in Flensberg (1998) and Komnik and Egger (2001).…”

“…Coulomb drag between two closely spaced but electrically isolated quantum wires was used to observe Wigner crystallization (Yamamoto et al, 2002(Yamamoto et al, , 2006(Yamamoto et al, , 2012 and Luttinger-liquid effects (Debray et al, 2001;Laroche et al, 2008Laroche et al, , 2014. The effect was also used to study 1D sub-bands in quasi-1D wires (Debray et al, 2000;Laroche et al, 2011).…”

“…They have been used to investigate properties of electron-electron scattering in low-density 2D electron systems Kellogg et al, 2002a); signatures of metal-insulator transition in dilute 2D hole systems (Jörger et al, 2000a,b;Pillarisetty et al, 2002Pillarisetty et al, , 2005a; quantum coherence of electrons (Kim et al, 2011;Price et al, 2008Price et al, , 2007 and composite fermions (Price et al, 2010); exciton effects in electron-hole bilayers Keogh et al, 2005;Morath et al, 2009;Seamons et al, 2009); exotic bilayer collective states (Eisenstein, 2014), especially the quantum Hall effect (QHE) at the total filling factor ν T = 1 (Finck et al, 2010;Kellogg et al, 2003Kellogg et al, , 2002bSchmult et al, 2010;Spielman et al, 2004;Tutuc et al, 2009); compressible quantum Hall (QH) states at half-integer filling factor (Muraki et al, 2004;Zelakiewicz et al, 2000); integer QH regime (Lok et al, 2002); Luttinger liquid effects (Debray et al, 2001;Laroche et al, 2008Laroche et al, , 2014; Wigner crystallization in quantum wires (Yamamoto et al, 2002(Yamamoto et al, , 2006(Yamamoto et al, , 2012; and one-dimensional (1D) sub-bands in quasi 1D wires (Debray et al, 2000;Laroche et al, 2011). More generally, interlayer interaction and corresponding transport properties have been studied in hybrid devices comprising a quantum wire and a quantum dot (Krishnaswamy et al, 1999); a SC film and a 2D electron gas (Farina et al, 2004); Si metal-oxide-semiconductor systems …”