1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures

Dankert, André; Cummings, Aron W.; Power, Stephen R.; Roche, Stephan; Dash, Saroj P.

doi:10.1088/2053-1583/aa8d2b

Cited by 29 publications

(31 citation statements)

References 33 publications

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“…In addition, we observe a gate dependence tuning of the SGE signal magnitude with a sign change for the electronand hole-doped regimes of the Gr-MoTe 2 heterostructure. The effect of stray Hall effect in our SGE signal can be disregarded because of the larger channel length between the injector and detector, and higher magnitude of the obtained SGE signal, which is in the range of few Ohms where the magnitude of the stray Hall effect is estimated to be in the range of few milli-Ohms in a similar kind of device structure 16,48 . The controlled experiments with only graphene channels show a null signal, further supporting the measurements.…”

Section: Discussionmentioning

confidence: 99%

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

et al. 2021

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The ability to engineer new states of matter and control their spintronic properties by electric fields is at the heart of future information technology. Here, we report a gate-tunable spin-galvanic effect in van der Waals heterostructures of graphene with a semimetal of molybdenum ditelluride at room temperature due to an efficient spin-charge conversion process. Measurements in different device geometries with control over the spin orientations exhibit spin-switch and Hanle spin precession behavior, confirming the spin origin of the signal. The control experiments with the pristine graphene channels do not show any such signals. We explain the experimental spin-galvanic signals by theoretical calculations considering the spin-orbit induced spin-splitting in the bands of the graphene in the heterostructure. The calculations also reveal an unusual spin texture in graphene heterostructure with an anisotropic out-of-plane and in-plane spin polarization. These findings open opportunities to utilize graphene-based heterostructures for gate-controlled spintronic devices.

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Section: Discussionmentioning

confidence: 99%

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

et al. 2021

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“…2 with 1D FM edge contacts which completely keeps the residues away from graphene by fully encapsulating with thick hBN layers. There has been only one report showing the possibility of spin injection through 1D FM contacts 68 and these contacts are yet to be proved viable for efficient spin injection and detection.…”

Section: A Device Geometriesmentioning

confidence: 99%

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

2018

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The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO2 substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements, at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.

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“…Similar gate dependence of the spin-switch signal is observed for device 1 (see Appendix G). These results rule out any contribution of the local Hall effect produced by the local fringe field from the FM detector contact edges on the graphene, since this effect should change its sign with carrier types in graphene [41].…”

Section: Resultsmentioning

confidence: 51%

Charge-spin conversion in layered semimetal TaTe2 and spin injection in van der Waals heterostructures

Hoque

Khokhriakov

Dash

2020

Phys. Rev. Research

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A spin-polarized current source using nonmagnetic layered materials is promising for next-generation allelectrical spintronic science and technology. Here we electrically created spin polarization in a layered semimetal TaTe 2 via the charge-spin conversion process. Using a hybrid device of TaTe 2 in a van der Waals heterostructure with graphene, the spin polarization in TaTe 2 is efficiently injected and detected by nonlocal spin-switch, Hanle spin precession, and inverse spin Hall effect measurements. Systematic experiments at different bias currents and gate voltages in a vertical geometry prove the TaTe 2 as a nonmagnetic spin source at room temperature. These findings demonstrate the possibility of making an all-electrical spintronic device in a two-dimensional van der Waals heterostructure, which can be essential building blocks in energy-efficient spin-orbit technology.

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1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures

Cited by 29 publications

References 33 publications

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

Charge-spin conversion in layered semimetal TaTe2 and spin injection in van der Waals heterostructures

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