1X deep-UV lithography with chemical amplification for 1-micron DRAM production

Maltabes, John G.; Holmes, Steven J.; Morrow, James R.; Barr, Roger L.; Hakey, Mark C.; Reynolds, Gregg; Brunsvold, William R.; Willson, C. Grant; Clecak, Nicholas J.; Macdonald, Scott; Itô, Hiroshi

doi:10.1117/12.20090

Cited by 37 publications

(11 citation statements)

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“…Although the chemical amplification concept was considered an interesting laboratory curiosity even within IBM with the patent disclosure initially rated to publish in IBM Technical Disclosure Bulletin, IBM was quick to employ the tBOC resist in manufacture of 1 Mbit DRAMs with the minimum feature size of 1 µm on Perkin Elmer 500 mirror projection scanners operating in the deep UV mode [41]. The rest of the industry was using a novolac resist on g-line exposure systems at that time.…”

Section: Growth Of Chemical Amplification Resistsmentioning

confidence: 99%

Evolution and Progress of Deep UV Resist Materials.

Itô

1998

J. Photopol. Sci. Technol.

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It has been almost thirty years since the first deep UV exposure was carried out and almost twenty five years since the term "deep UV lithography" was coined. Although resist systems classified as "chemical amplification resists" are the workhorse for the 248 nm deep UV lithography, the resist materials have evolved significantly in the realm of deep UV lithography as well as within the boundary of chemical amplification. This paper describes the evolution and progress of the deep UV (248-193 nm) positive resist materials that have occurred in the last quarter century.

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Section: Growth Of Chemical Amplification Resistsmentioning

confidence: 99%

Evolution and Progress of Deep UV Resist Materials.

Itô

1998

J. Photopol. Sci. Technol.

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“…One example is the conversion of a t-butyl carbonate to a phenol (Scheme 1). This solid state, acid catalyzed reaction has been used for high resolution lithography by both research workers [12] as well as the production of 1 M DRAMs [21].…”

Section: Catalytic Chain Lengthmentioning

confidence: 99%

Photoacid generation in polymeric films.

Macdonald

McKean

1990

J. Photopol. Sci. Technol.

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A major photoproduct from the irradiation of triphenylsulfonium salts is a Bronsted acid. This photochemical process has been used in several polymer film applications where the acid is used for crosslinking of films or to initiate some other acid catalyzed reaction. Despite the widespread applications of these materials, little has been published about the efficiency of acid generation in polymeric films or catalytic chain length associated with chemically amplified systems. This talk will describe the use of a merocyanine dye technique to analyze for acid production in polymer films.The amount of acid produced on irradiation (LTV or E-beam) has been determined by this method and the catalytic chain length has Leen measured for one chemically amplified resist system.

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“…[1][2][3][4][5] The diffraction limit 6 associated with all optical systems, has been circumvented by a number of techniques like self-aligned patterning techniques, 7,8 multiple exposure-and-etch mechanisms 9 and a number of other near-field methods [10][11][12][13] that have been inspired by techniques of super-resolution nanoscopy like stimulated-emission-depletion (STED).…”

Section: Introductionmentioning

confidence: 99%

Reverse-absorbance-modulation-optical lithography for optical nanopatterning at low light levels

et al. 2016

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A comprehensive simulation model of the performance of photochromic films in absorbance-modulationoptical-lithography AIP Advances 6, 035210 (2016); 10.1063/1.4944489Outdoor measurements of a photovoltaic system using diffractive spectrum-splitting and concentration AIP Advances 6, 095311 (2016) Absorbance-Modulation-Optical Lithography (AMOL) has been previously demonstrated to be able to confine light to deep sub-wavelength dimensions and thereby, enable patterning of features beyond the diffraction limit. In AMOL, a thin photochromic layer that converts between two states via light exposure is placed on top of the photoresist layer. The long wavelength photons render the photochromic layer opaque, while the short-wavelength photons render it transparent. By simultaneously illuminating a ring-shaped spot at the long wavelength and a round spot at the short wavelength, the photochromic layer transmits only a highly confined beam at the short wavelength, which then exposes the underlying photoresist. Many photochromic molecules suffer from a giant mismatch in quantum yields for the opposing reactions such that the reaction initiated by the absorption of the short-wavelength photon is orders of magnitude more efficient than that initiated by the absorption of the long-wavelength photon. As a result, large intensities in the ring-shaped spot are required for deep sub-wavelength nanopatterning. In this article, we overcome this problem by using the long-wavelength photons to expose the photoresist, and the short-wavelength photons to confine the "exposing" beam. Thereby, we demonstrate the patterning of features as thin as λ/4.7 (137nm for λ = 647nm) using extremely low intensities (4-30 W/m 2 , which is 34 times lower than that required in conventional AMOL). We further apply a rigorous model to explain our experiments and discuss the scope of the reverse-AMOL process. C 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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1X deep-UV lithography with chemical amplification for 1-micron DRAM production

Cited by 37 publications

References 0 publications

Evolution and Progress of Deep UV Resist Materials.

Evolution and Progress of Deep UV Resist Materials.

Photoacid generation in polymeric films.

Reverse-absorbance-modulation-optical lithography for optical nanopatterning at low light levels

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