2.05-/spl mu/m-laser-pumped orientation-patterned gallium arsenide (OPGaAs) OPO

Infrared (2–12 μm) solid-state laser sources: a review

“…The first OP-GaAs based OPO has been recently demonstrated emitting 3 µJ at 7.9 µm with a 5.78-9.14 µm tuning range [111]. Since then, direct pumping by a Tm,Ho:YLF laser emitting at 2.05 µm has been implemented with an output power of 442 mW (signal at 3.5 µm + idler at 4.98 µm) from 2.6 W of pump power at 10 kHz rep. rate [105]. More recently, up to 0.6 W has been obtained with a 2-µm pumped OP-GaAs OPO [106].…”

Thick low-loss orientation-patterned gallium arsenide (OP-GaAs) samples for mid-infrared laser sources

“…Another OPO was later shown with an OPGaAs process based on Low-Pressure HVPE [13] . Nevertheless, up to now, output power has been limited to 0.5 W and slope efficiency to 20 % due to sample losses.…”

Progress in Orientation-Patterned GAAS for Next-Generation Nonlinear Optical Devices (Postprint)

“…The Tm,Ho:YLF pump laser operating at 2.05 µm was Q-switched at a repetition rate of 500 Hz, for a pulse width of 43 ns at an average output power of 1.5 W. The pump was focused to a radius (1/e 2 ) of about 90 µm at the center of the OPGaAs sample, and attenuated to an average power of less than 150 mW to stay below the reported damage threshold of about 1.35 J/cm 2 . 4 The OPO resonator used meniscus mirrors with a 2.5-cm radius of curvature, coated for doubly resonant oscillation, with a reflectivity of 80% at the signal and idler wavelengths. The resonator was kept as short as possible to minimize threshold, and ranged from 1.2 cm to 2.0 cm depending on the sample length.…”

“…The output wavelength was tuned over a range of 0.5 µm by varying the OPGaAs crystal temperature. 4 Vodopyanov, et. al.…”