2.4‐GHz CMOS linear power amplifier for IEEE 802.11N WLAN applications

Yoo, Jinho; Lee, Changhyun; Kang, Inseong; Son, Minoh; Sim, Yonghoon; Park, Changkun

doi:10.1002/mop.30343

Cited by 6 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…LNA and PA designs can be with chips as well as with transistors such as Complementary Metal Oxide Semiconductor (CMOS), heterojunction bipolar transistor (HBT), field-effect transistor (FET), High-electronmobility transistor (HEMT) and Pseudomorphic High Electron Mobility Transistor (pHEMT) [5][6]; the biasing is prominent for the selection [7]. The waves emitted from the antenna have to be 1556 amplified first with PA and it is essential to form a stable [8] and efficient [9] circuit according to practice. While creating the PA circuit, which class will be applied may also be selected according to the level of efficiency and linearity [10].…”

Section: Introductionmentioning

confidence: 99%

Power Amplifier and Low Noise Amplifier for WLAN Applications

Duman

2022

ECJSE

View full text Add to dashboard Cite

WLAN applications operating at a frequency of 2.45 GHz are a frequently used communication method in transmission tools. The connection functions to send and receive data between access points and smart devices are also fulfilled by WLAN technology. Communication quality in data transfer gains importance for this technology at every stage. Front-end module structures are used to increase such quality affects directly the efficiency. Circuits including power amplifier (PA), low noise amplifier (LNA), antenna and filter are the most significant components compose front-end structures. In this study, PA and LNA using PW570 gain block & BFP760 RF transistor circuit respectively are proposed. By means of the usage of the proposed circuits, there will be considerable improvements in data communication speed and area of coverage, which are among the WLAN performance factors.

show abstract

Section: Introductionmentioning

confidence: 99%

Power Amplifier and Low Noise Amplifier for WLAN Applications

Duman

2022

ECJSE

View full text Add to dashboard Cite

show abstract

“…In recent years, many studies related to the CMOS power amplifier were conducted with fully integrated RF systems to reduce the unit cost of production . However, given that the CMOS has a low breakdown voltage when compared to the HBT, a large drain voltage swing contributes to active device stress .…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, many studies related to the CMOS power amplifier were conducted with fully integrated RF systems to reduce the unit cost of production. [1][2][3][4] However, given that the CMOS has a low breakdown voltage when compared to the HBT, a large drain voltage swing contributes to active device stress. 5,6 The amplitude of the drain voltage of a power amplifier is several times the supply voltage; this degrades the reliability of the CMOS power amplifier.…”

Section: Introductionmentioning

confidence: 99%

Differential 2.4‐GHz CMOS power amplifier using stacked NMOS, transformer, and PMOS structures to enhance reliability

Lee

Park

et al. 2019

Micro & Optical Tech Letters

Self Cite

View full text Add to dashboard Cite

In this work, we propose a power amplifier using a stacked NMOS, transformer, and a PMOS structure to enhance the reliability of CMOS power amplifiers. The power stage of the amplifier is separated into NMOS and PMOS amplifier stages to moderate the peak voltages at the drains of each NMOS and PMOS. The power generated in the 2 amplifier stages is combined in the transformer, which has 2 primary parts and 1 secondary part. To verify the functionality of the structure, we designed a 2.4‐GHz differential CMOS power amplifier for IEEE 802.11n WLAN applications with 64 quadrature amplitude modulation, 9.6 dB peak‐to‐average power ratio, and a bandwidth of 20 MHz. The designed power amplifier is fabricated using the 180‐nm silicon‐on‐insulator RF CMOS process. The measured maximum linear output power is 17.88 dBm with a gain of 24.34 dB.

show abstract

“…One of the most popular structures which can be used to overcome the problems associated with CMOS power amplifiers is differential structure, as shown in Fig. 1 [17][18][19]. Since differential structure provides a virtual ground in an integrated CMOS power amplifier, the gain reduction problem induced by the parasitic inductance and bond wires is easily solved.…”

Section: Introductionmentioning

confidence: 99%

A Cmos Power Amplifier Using an Asymmetrical Input Transformer to Enhance the Gain for Ieee 802.11N Wlan Applications

Sim¹,

Yoo²,

Lee³

et al. 2019

PIER M

Self Cite

View full text Add to dashboard Cite

In this study, we propose an asymmetrical input transformer for the input baluns in a differential RF CMOS power amplifier to minimize the loss induced by the input transformer. To reduce the loss caused by the magnetic coupling between the primary and secondary parts of a typical transformer, we modify the interconnection between the input transformer and the differential input of the driver stage. Unlike a typical transformer, the primary and secondary parts of the proposed transformer are directly connected to the input of the driver stage. As a result, the input signal in the primary part can reach one of the inputs of the differential driver stage, thereby reducing the loss caused by magnetic coupling. To verify the functionality of the proposed asymmetrical input transformer, we designed a 4.5-GHz differential CMOS power amplifier for IEEE 802.11n WLAN applications with 64-QAM, 9.6 dB PAPR, and a bandwidth of 20 MHz. The designed power amplifier is fabricated using the 180-nm SOI RF CMOS process. The measured maximum linear output power is 17.59 dBm with a gain of 29.23 dB.

show abstract

2.4‐GHz CMOS linear power amplifier for IEEE 802.11N WLAN applications

Cited by 6 publications

References 15 publications

Power Amplifier and Low Noise Amplifier for WLAN Applications

Power Amplifier and Low Noise Amplifier for WLAN Applications

Differential 2.4‐GHz CMOS power amplifier using stacked NMOS, transformer, and PMOS structures to enhance reliability

A Cmos Power Amplifier Using an Asymmetrical Input Transformer to Enhance the Gain for Ieee 802.11N Wlan Applications

Contact Info

Product

Resources

About