2.4 µm cutoff wavelength avalanche photodiode on InP substrate

Sidhu, R.; Zhang, L.; Tan, Nenita S.; Duan, Ning; Campbell, Joe C.; Holmes, A. L.; Hsu, Chen-Chien; Itzler, Mark A.

doi:10.1049/el:20063415

Cited by 29 publications

(18 citation statements)

References 5 publications

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“…The breakdown voltage of the device, V bd defined here as the voltage at which the current exceeds 100 PA, is found to decrease with decreasing temperature. The temperature dependence of V bd characterised by the rate of change of breakdown voltage over the temperature range, is approximately 40 mVK -1 , which is less than half that of an InP/type-II APD with a 0.8 Pm InP multiplication layer [6].…”

Section: Resultsmentioning

confidence: 86%

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Low excess noise APD with detection capabilities above 2 microns

Goh

Ong

Zhang

et al. 2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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In this work, we present the study on Separate Absorption, Charge and Multiplication (SACM) APDs utilising In 0.52 Al 0.48 As as the multiplication layer and In 0.53 Ga 0.47 As/GaAs 0.51 Sb 0.49 periodic heterostructures as the absorption layer. In 0.52 Al 0.48 As lattice matched to InP has been shown to have superior excess noise characteristics and multiplication with relatively low temperature dependence compared to InP. Furthermore, the type-II staggered band line-up of In 0.53 Ga 0.47 As/GaAs 0.51 Sb 0.49 heterostructures leads to a narrower effective bandgap of approximately 0.49 eV corresponding to the APD cut off wavelength of 2.4 Pm. The SACM APD exhibited low dark current densities near breakdown. The device also exhibited multiplication in excess of 100 at 200 K. The excess noise of the APD was low as expected, and is comparable to that of a 1 Pm In 0.52 Al 0.48 As PIN diode.

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Section: Resultsmentioning

confidence: 86%

“…Sidhu et al [5], [6] reported a MBE-grown type-II PIN diode with 50% cut-off wavelength of 2.39 ȝm and a InP-based SACM APDs utilizing the type-II heterostructures as the absorption layer with capability of detection at 2.4 Pm with gains greater than 30 at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Low excess noise APD with detection capabilities above 2 microns

Goh

Ong

Zhang

et al. 2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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show abstract

“…The data for LMM InP 0.75 As 0.25 /InP APDs are about a factor of 20 lower than that of a 55% AlGaAsSb/GaSb p-i-n structure with 1-mm-wide i-region [23]. Geiger-mode operation of type II GaInAs/GaAsSb APDs was not reported [4].…”

Section: Lmm Inp 1àymentioning

confidence: 85%

“…5a and 5b. The probe was scanned along the [1][2][3][4][5][6][7][8][9][10] direction. The faint lines that run diagonally across the image are atomic step edges on the surface of the epitaxial layer.…”

Section: Lmm Inpas/inp Materials Characterization Resultsmentioning

confidence: 99%

“…Two other less-conventional approaches are based on InP substrates, both of which are attractive since there is already considerable infrastructure for InP device processing. One approach incorporates a type-II GaInAs/ GaAsSb superlattice absorber that is grown latticematched to the InP multiplier layer [4]. The other approach uses epilayers that are grown lattice-mismatched (LMM) to the InP substrate [5].…”

Section: Introductionmentioning

confidence: 99%

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