2016
DOI: 10.1002/mmce.20989
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2-6 GHz GaN distributed power amplifier MMIC with tapered gate-series/drain-shunt capacitors

Abstract: In this article, using a 0.25 lm GaN HEMT process, we present a 2-6 GHz GaN two-stage distributed power amplifier MMIC that utilizes tapered gate series capacitors and nonuniform drain transmission lines with tapered shunt capacitors to simultaneously obtain a linear gain enhancement and optimum load line for each transistor. By using well-derived equations to provide each transistor with the optimum load impedance and to tune the phase delay between the input and output transmission lines, the nonuniform dist… Show more

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Cited by 7 publications
(3 citation statements)
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References 19 publications
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“…100 % 이상의 비대역폭을 갖는 GaN HEMT 기반의 광 대역 전력증폭기 MMIC(Monolithic Microwave Integrated Circuit)는 리액티브 정합 [1] 또는 분산 증폭 구조 [6] . …”
Section: ⅰ 서 론unclassified
“…100 % 이상의 비대역폭을 갖는 GaN HEMT 기반의 광 대역 전력증폭기 MMIC(Monolithic Microwave Integrated Circuit)는 리액티브 정합 [1] 또는 분산 증폭 구조 [6] . …”
Section: ⅰ 서 론unclassified
“…Due to the gain roll-off characteristics of transistor and its input and output impedances vary with frequency, how to achieve small-scale fully integrated 1-Watt PA with more than 20% fractional bandwidth and over 22 dB small-signal gain is the major issue to be solved in this study. Discussing the current mainstream of several typical broadband configurations, distributed amplifier has the widest bandwidth by incorporating the parasitic capacitances of multiple cells in parallel into artificial transmission lines, but it generally suffers from low gain, limited power level, and bad integration [1,6,7,8].…”
Section: Introductionmentioning
confidence: 99%
“…GaN high-electron-mobility transistor (HEMT) wideband power amplifiers have been studied for multi-mode communication systems, electronic warfare systems, and other frequency-agile systems that required high-power operation over a wide frequency range [1][2][3][4][5][6][7][8][9][10]. While the transistor gain decreases with the frequency, a wideband power amplifier requires a flat gain performance in the interested bandwidth.…”
Section: Introductionmentioning
confidence: 99%