2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance-Compensation Shorted Stubs

Lee, Sangkyung; Bae, Kyung-Tae; Kim, Dong-Wook

doi:10.5573/jsts.2016.16.3.312

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…Figure 5 shows the output matching circuit that is tuned to the optimum load impedance. Double λ/4 shorted stubs were used for a DC drain current supply and had an LC-parallel resonator effect at the center frequency, thus reducing the variation of the transistor's output impedance trace and facilitating wideband impedance-matching within a low-Q region on the Smith chart [18,19]. Figure 6 shows the variation of the output impedance trace before and after the insertion of the λ/4 shorted stubs.…”

Section: Input and Output Matching Circuit Designmentioning

confidence: 99%

Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems

et al. 2020

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In this paper, we demonstrate a compact 20-W GaN internally matched power amplifier for 2.5 to 6 GHz jammer systems which uses a high dielectric constant substrate, single-layer capacitors, and shunt/series resistors for low-Q matching and low-frequency stabilization. A GaN high-electron-mobility transistor (HEMT) CGH60030D bare die from Wolfspeed was used as an active device, and input/output matching circuits were implemented on two different substrates using a thin-film process, relative dielectric constants of which were 9.8 and 40, respectively. A series resistor of 2.1 Ω was chosen to minimize the high-frequency loss and obtain a flat gain response. For the output matching circuit, double λ/4 shorted stubs were used to supply the drain current and reduce the output impedance variation of the transistor between the low-frequency and high-frequency regions, which also made wideband matching feasible. Single-layer capacitors effectively helped reduce the size of the matching circuit. The fabricated GaN internally matched power amplifier showed a linear gain of about 10.2 dB, and had an output power of 43.3–43.9 dBm (21.4–24.5 W), a power-added efficiency of 33.4–49.7% and a power gain of 6.2–8.3 dB at the continuous-wave output power condition, from 2.5 to 6 GHz.

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Section: Input and Output Matching Circuit Designmentioning

confidence: 99%

Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems

et al. 2020

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“…A parallel inductor L b is combined with a shunt capacitor C 1 to make a parallel LC resonant circuit, where L b can be used as an RF-choke inductor for a drain bias supply. The parallel LC resonant circuit compensates the reactance of the output impedance Z d including L 1 to obtain the impedance Z d ' with a low-Q value, thereby facilitating wideband impedance transformation at the fundamental frequency [14].…”

Section: Output Matching Circuit Design With the Third Harmonic-tunedmentioning

confidence: 99%

X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit

et al. 2017

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This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE) using a 0.25 µm GaN HEMT process of WIN semiconductors, Inc. The optimum load impedances at the fundamental and third harmonic frequencies are extracted from load-pull simulations at the transistor's extrinsic plane, including the drain-source capacitance and the series drain inductance. The third harmonic-tuned circuit is effectively integrated with the output matching circuit at the fundamental frequency, without complicating the whole output matching circuit. The input matching circuit uses a lossy matching scheme, which allows a good return loss and a simple LC low-pass circuit configuration. The fabricated power amplifier monolithic microwave integrated circuit (MMIC) occupies an area of 13.26 mm 2 , and shows a linear gain of 20 dB or more, a saturated output power of 43.2~44.7 dBm, and a PAE of 35~37% at 8.5 to 10.5 GHz.

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2.5～6 GHz 20-W Wideband GaN HEMT Internally Matched Power Amplifier

Lee¹,

Kim²,

Hong³

et al. 2019

J. Korean Inst. Electromagn. Eng. Sci.

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In this study, we designed and fabricated a 20-W internally matched gallium nitride(GaN) high-electron-mobility transistor(HEMT) power amplifier for an electronic warfare jammer in the frequency band of 2.5～6 GHz. The CGH60030D GaN HEMT from Wolfspeed was used as an amplifying device, and lossy matching was applied. An input series resistor that was used at the gate side for wideband matching reduced the amplifier's low-frequency gain and minimized high-frequency loss in the design frequency band. Input and output matching circuits were implemented on two different substrates whose relative dielectric constants were 40 and 9.8, respectively. The fabricated internally matched power amplifier showed a linear gain of approximately 11.5 dB, a power-added efficiency of 35.6～40.5 %, and a power gain of 7.2～8.8 dB at an output power of 20 W from 2.5 to 6 GHz.

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2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance-Compensation Shorted Stubs

Cited by 3 publications

References 8 publications

Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems

Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems

X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit

2.5～6 GHz 20-W Wideband GaN HEMT Internally Matched Power Amplifier

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