2-D Direct-Coupled Standing-Wave Oscillator Arrays

Chen, Yen–Ju; Chu, Ta-Shun

doi:10.1109/tmtt.2013.2285352

Cited by 15 publications

(1 citation statement)

References 32 publications

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“…Moreover, devices whose operation frequencies are contained by the first 3 transmission windows of the low-THz band, which, approximately, range from 275 to 420 GHz [19,20], are selected in order to demonstrate the potential for 5G in the THz region. This limitation imposed the exclusion of a number of notable Si CMOS studies that are just outside the frequency range [21,22].…”

Section: Thz Band Device Technologiesmentioning

confidence: 99%

Energy-efficient modulation and physical layer design for low terahertz band communication channel in 5G femtocell Internet of Things

2018

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High throughput capability of the terahertz band (0.3-10 THz) wireless communications is expected to be utilized by the fifth generation of mobile telecommunication systems and enable a plethora of new applications. Supporting devices will transfer large amounts of data in both directions, causing high energy consumption by the electronic circuitries of the equipment in use. Therefore, physical layer for these systems must be designed carefully in order to reduce energy consumption per bit. In this paper, the best performing modulation scheme and hardware parameters that minimize the energy consumption without affecting the system throughput are determined. THz band device technologies are outlined and a complete survey of the state-of-the-art low-THz band circuit blocks which are suitable for mass market production is given. It is shown that for short-range communications, M-ary quadrature amplitude modulation is the most energy-efficient technique that can lead up to 90% reduction in consumed energy. Moreover, optimal transceiver parameters which can be used to further minimize the energy consumption of the THz band system are examined.

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Section: Thz Band Device Technologiesmentioning

confidence: 99%