2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms

Rössner, B.; Känel, H. von; Chrastina, D.; Isella, Giovanni; Batlogg, B.

doi:10.1016/j.tsf.2005.07.341

Cited by 9 publications

(8 citation statements)

References 18 publications

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“…Moreover, this RT channel carrier density is lower than the measured LT Hall sheet density where all parallel conduction is frozen out. A potential explanation for this is that for a sGe QW the RT Fermi level moves away from the Ge valence band as a result of strong ionization of boron impurities [4,5,23]. …”

Section: Measurement Analysis and Me-msa Methodsmentioning

confidence: 99%

“…Both low temperature (LT) [1][2][3][4][5] and room temperature (RT) [6][7][8][9][10][11][12][13][14][15] measurements have been studied in order to obtain a better understanding of the fundamental physics behind these transport properties. It is found that to obtain an improved electrical performance for sGe, a high purity Ge QW needs to be grown on a Ge-rich buffer layer with a low defect density.…”

Section: Introductionmentioning

confidence: 99%

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Ultra high hole mobilities in a pure strained Ge quantum well

et al. 2014

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Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were −14 T b B b +14 T and 1.5 K b T b 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s was determined for a sheet density (p s ) 9.8 × 10 10 cm −2 (by ME-MSA) and (3.9 ± 0.2) × 10 3 cm 2 /V s for a sheet density (p s ) 5.9 × 10 10 cm −2 (by BAMS).

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Section: Measurement Analysis and Me-msa Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultra high hole mobilities in a pure strained Ge quantum well

et al. 2014

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“…Thus, there exist new scattering channels which involve the first excited subband. 10) As a result, the 2DHG mobility is decreased at this well width, so making a peak.…”

Section: Well Width Dependence Of Mobilitymentioning

confidence: 97%

“…There were a great number of relevant experiments. [3][4][5][6][7][8][9][10][11][12] It is obvious that 2S doping of square QWs leads to a symmetric band bending. The theory of band bending effects in square QWs from 2S doping is more complicated than that from the 1S doping.…”

Section: Introductionmentioning

confidence: 99%

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

et al. 2011

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We presented a theoretical study of the effects from two-side (2S) doing on low-temperature lateral transport in square quantum wells (QWs). Within a variational approach, we obtained analytic expressions for the carrier distribution, screening function, and autocorrelation functions for various scattering mechanisms. We found that the mobility of a 2S-doped square QW is larger than that of the one-side (1S) doped counter part for scattering from both interfaces or from the top interface. However, the former is smaller than the latter for scattering from the bottom (substrate-side) interface. The mobility of a 2S-doped square QW exhibits a well-width evolution slower than the power-of-six law characteristic of the undoped QW. The mobility may be enhanced by 2S doping. We examine the dependence of the enhancement factor on QW parameters for optimization of the structure. This factor may achieve an order of magnitude, which is much larger than that provided by earlier methods. Our theory is able to reproduce recent experimental data on transport in 2S-doped narrow square QWs, e.g., the mobility dependence on well width and the enhancement factor, which have not been explained so far.

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“…This is, in turn, fixed by confining sources. It was indicated [2][3][4][5][6][7][8][9][10][11] that roughness-related scattering dominates transport in many heterostructures, especially thin square QWs. This is determined by the wave function near the interface.…”

Section: Introductionmentioning

confidence: 99%

On the Role of Magnetic Field Fluctuations in Diffusive Shock Acceleration

Anh¹,

Diep²,

Dong³

et al. 2011

Comm. in Phys.

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Abstract. We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility limited by one-interface roughness scattering. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in symmetric two-side doped square QWs to that in the asymmetric one-side counterpart under the same doping and interface profiles. The enhancement is fixed by the sample parameters such as well width, sheet carrier density, and correlation length. So, we propose two-side doping as an efficient way to upgrade the quality of QWs. The two-interface roughness scattering is also incorporated to make comparison.

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2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms

Cited by 9 publications

References 18 publications

Ultra high hole mobilities in a pure strained Ge quantum well

Ultra high hole mobilities in a pure strained Ge quantum well

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

On the Role of Magnetic Field Fluctuations in Diffusive Shock Acceleration

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