2011
DOI: 10.1143/jpsj.80.044714
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Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

Abstract: We presented a theoretical study of the effects from two-side (2S) doing on low-temperature lateral transport in square quantum wells (QWs). Within a variational approach, we obtained analytic expressions for the carrier distribution, screening function, and autocorrelation functions for various scattering mechanisms. We found that the mobility of a 2S-doped square QW is larger than that of the one-side (1S) doped counter part for scattering from both interfaces or from the top interface. However, the former i… Show more

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Cited by 4 publications
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