Abstract:We present a theoretical study of the transport properties of two-dimensional hole gas (2DHG) in Ge channel modulation-doped square quantum wells, with very high room-temperature drift mobilities. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. The results were used to determine the hole mobility where only the relevant scattering processes, namely acoustic phonons (Deformation potential and Piezoelec… Show more
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