2 Diffusion in Si-Ge alloys

Bracht, H.; Stolwijk, N. A.

doi:10.1007/10426818_9

Cited by 2 publications

(1 citation statement)

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“…It suggests a graded interface is formed by highly mobile O atoms diffusing into the Ge bulk. This picture is supported by diffusion data, 29,30 which indicates O in Ge is more mobile than Ge in GeO 2 by at least 2-3 orders of magnitude in the temperature range investigated. At higher temperatures, as shown representatively in Fig.…”

Section: X-ray Photoelectron Spectroscopysupporting

confidence: 65%

Optimal Oxide Passivation of Ge for Optoelectronics

O'Brien

Wu²,

Stephenson

et al. 2014

ECS J. Solid State Sci. Technol.

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Oxide passivation is an active field of investigation for reducing surface state densities on Ge surfaces, namely below high-K gate stacks. However, the quality of Ge oxide passivation has not been as widely investigated in the context of performance in minority carrier photonic devices. p-Ge substrates with a foundry-applied oxide passivation are compared with oxide-stripped substrates passivated by dry thermal oxides grown between 400 • C-650 • C in O 2 . By using p-Ge, only the behavior of minority conduction electrons and their associated traps become the relevant focus of this study. Passivation quality, as evaluated by photoluminescence (PL), is found to vary as a function of temperature between 400-650 • C. Changes in PL intensity are attributed to differences in surface termination of the p-Ge substrate. X-ray photoelectron spectroscopy (XPS) studies find that the presence of suboxides (GeO x ) increase with oxidation temperature, with GeO 2 dominant at 400 • C and mixed suboxides at higher temperatures. Nonuniform desorption of Ge oxide is confirmed above 550 • C. Thermal oxidation is also shown to improve the quality of ion-damaged Ge surfaces. We conclude that suboxides confer better passivation than a GeO 2 interface, as determined by PL intensity.

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Section: X-ray Photoelectron Spectroscopysupporting

confidence: 65%