2-Phase 2-stage capacitor-less gate driver for Gallium Nitride Gate Injection Transistor for reduced gate ringing

Cai, Aaron; Herreria, Arnel C; How, Sin Ban; Siek, Liter

doi:10.1109/wipda.2015.7369259

Cited by 4 publications

(1 citation statement)

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“…The diode characteristic of the gate limits the input voltage below 5 V, but a higher driving voltage is desirable during the turn-on transient to enable faster switching. This can be accomplished with an RC-type gate driving circuit, or a multi-stage driver as demonstrated in [84]. Panasonic has recently released a commercial driver IC for their device that includes this feature [85].…”

Section: E Steady-state Gate Currentmentioning

confidence: 99%

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Jones

Wang

Costinett

2016

IEEE J. Emerg. Sel. Topics Power Electron.

911

324

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GaN power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. Additionally, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic Rds,on, breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters as these devices become increasingly available on a commercial scale.

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Section: E Steady-state Gate Currentmentioning

confidence: 99%