20‐2: Integration of Through Glass Via Interconnects within Thin Film Transistor Active Matrix Backplanes

Abstract

There is increasing interest in minimizing display bezels or creating truly borderless displays for liquid crystal, organic light emitting diode, and emerging microLED technologies. The current approach is integration of side‐bonded electrodes or wrap‐around electrodes to enable flex connector attachment on the backplane edge face or backs surface. These approaches utilize the backplane perimeter to achieve the required electrical interconnection. In contrast, metallized through glass via interconnects can be distributed across the backplane surface. This provides a more localized connection for backplane signal and power. This paper summarizes successful integration of metallized via interconnects with thin film transistors.