a b s t r a c tSemiconductors with low lattice thermal conductivity are important in the search for more efficient thermoelectric materials. The thermal conductivity of nanocrystalline (<7 nm) Zn 3 P 2, fabricated in thin film form by pulsed laser deposition, was measured from 80 K to 294 K. The thermal conductivity of the film showed weak temperature dependence in this temperature range and at 294 K had its highest value of 0.49 W/m K. Although Zn 3 P 2 and its family of isomorphic compounds are known to have intrinsically low thermal conductivity, at room temperature the thermal conductivity of this nanocrystalline film is 25% smaller than the calculated minimum thermal conductivity for Zn 3 P 2 . Analyzing the thermal conductivity data with the Callaway model revealed that the data could be well fit by considering only boundary scattering and point defect scattering. The boundary scattering length was in good agreement with the film's average crystallite size of 4.1 nm and the magnitude of the point defect scattering required the formation of V Zn -Zn i pairs from approximately 23% of the Zn sites. It is believed that a large number of point defects are responsible for the intrinsically low thermal conductivity of bulk Zn 3 P 2 and therefore the exceptionally low thermal conductivity found in the present study results from the nanometer dimensions of the crystallites. As previous studies have reported high Seebeck coefficients and electronic properties that are insensitive to grain boundaries in Zn 3 P 2 , the low thermal conductivity observed in the present study suggests that nanocrystalline Zn 3 P 2 should be further explored for use in thermoelectric applications.

The authors have developed a process to create wrap‐around electrodes (WAEs) on glass for use in tiled microLED display applications. The electrodes have small size and spacing, low resistance, and good reliability. In addition, an opaque overcoat protects the edges of the tiles and reduces seam visibility. These electrodes allow bezel‐free tiled operation for high‐resolution displays.

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We demonstrate single layer Cu interconnects using thin CuMn alloy as a temporary adhesion layer. After short annealing at 300°C for 60 s of a 10 nm CuMn alloy with 500 nm of Cu film, CuMn alloy layer is converted to pure Cu and the Mn is reacted with glass to form MnOx serving as an adhesion layer. After optimization of Mn concentration, alloy thickness, annealing environment, time and temperature, a resistivity lower than 1.8 μΩ·cm of the electrode was achieved. We also evaluated the effect of glass surface treatment to confirm the sensitivity of this process depending on substrate preparation conditions. This process has been shown to be very stable for different acid treatments on display glasses. It is also compared to a Ti/Cu stack as a reference.