20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs

Haglund, Erik; Kumari, Sulakshna; Westbergh, Petter; Gustavsson, Johan S.; Baets, Roel; Roelkens, Günther; Larsson, Anders

doi:10.1109/lpt.2016.2514699

Cited by 15 publications

(17 citation statements)

References 17 publications

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“…In our previous work [10], [11], the output power and high temperature performance were limited by a too small detuning between the gain peak and the cavity resonance wavelengths. However, the hybrid-cavity concept offers the opportunity to control the detuning, and therefore the laser performance, by the thickness of the bonding interface, while in an ordinary VCSEL the detuning is set during epitaxial growth and cannot be adjusted in a post-growth process.…”

Section: Introductionmentioning

confidence: 94%

“…Recently, we demonstrated silicon-integrated GaAs-based hybrid-cavity VCSELs (HC-VCSELs) with 1.6 mW output power at 845 nm [10] and capable of 20 Gb/s error-free data transmission under direct current modulation [11]. Ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding was used to attach a III-V "half-VCSEL" to a dielectric distributed Bragg reflector (DBR) on Si, see Fig.…”

Section: Introductionmentioning

confidence: 99%

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Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Kumari

Haglund

Gustavsson

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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Abstract-The impact of bonding interface thickness on the performance of 850-nm silicon-integrated hybrid-cavity verticalcavity surface-emitting lasers (HC-VCSELs) is investigated. The HC-VCSEL is constructed by attaching a III-V "half-VCSEL" to a dielectric distributed Bragg reflector on a Si substrate using ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding. The thickness of the bonding interface, defined by the DVS-BCB layer together with a thin SiO 2 layer on the "half-VCSEL," can be used to tailor the performance, for e.g., maximum output power or modulation speed at a certain temperature, or temperature-stable performance. Here, we demonstrate an optical output power of 2.3 and 0.9 mW, a modulation bandwidth of 10.0 and 6.4 GHz, and error-free data transmission up to 25 and 10 Gb/s at an ambient temperature of 25 and 85°C, respectively. The thermal impedance is found to be unaffected by the bonding interface thickness.

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Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Kumari

Haglund

Gustavsson

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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“…To compare the waveguide-excited SERS signals to a free-space excitation, we subtract the SiN background and rescale the spectrum to compensate for a total coupling loss (γ in γ out ) of 8 dB. The rationale behind compensating for these coupling losses is a future integration of the spectrometer [5] and light source [6] on the chip, eliminating the need for edge-coupling and thus minimizing losses in between components. On a shorter term it is possible to substantially reduce coupling losses by optimizing the waveguide design for a specific coupling geometry.…”

Section: (B)mentioning

confidence: 99%

“…This inspired the development of a silicon nitride (SiN) counterpart, paving the way for deep-UV fabricated integrated photonics at visible wavelengths. The ongoing improvement of different optical components such as low-loss waveguides [3], spectrometers [4,5] and hybrid integrated lasers [6] is leading to a maturation of this SiN platform [7]. Being transparent at near-infrared and visible wavelengths, SiN enables on-chip fluorescence [8] and Raman spectroscopy [9], as these scattering processes scale with λ −4 .…”

Section: Introductionmentioning

confidence: 99%

On-chip surface-enhanced Raman spectroscopy using nanosphere-lithography patterned antennas on silicon nitride waveguides

Wuytens¹,

Skirtach²,

Baets³

2017

Opt. Express

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Abstract:A hybrid integration of nanoplasmonic antennas with silicon nitride waveguides enables miniaturized chips for surface-enhanced Raman spectroscopy at visible and near-infrared wavelengths. This integration can result in high-throughput SERS assays on low sampling volumes. However, current fabrication methods are complex and rely on electron-beam lithography, thereby obstructing the full use of an integrated photonics platform. Here, we demonstrate the electronbeam-free fabrication of gold nanotriangles on deep-UV patterned silicon nitride waveguides using nanosphere lithography. The localized surface-plasmon resonance of these nanotriangles is optimized for Raman excitation at 785 nm, resulting in a SERS substrate enhancement factor of 2.5 × 10 5 . Furthermore, the SERS signal excited and collected through the waveguide is as strong as the free-space excited and collected signal through a high NA objective.

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“…It is based on adhesive bonding of epitaxial AlGaAs-material onto a dielectric distributed Bragg reflector (DBR) on silicon [6][7][8] . We have fabricated devices with surface emission having sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed 8 .…”

mentioning

confidence: 99%

Silicon-integrated hybrid-vertical-cavity lasers for life science applications

Gustavsson

Kumari

Haglund

et al. 2017

2017 IEEE Photonics Conference (IPC)

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The integration of efficient laser sources on silicon would enable fully integrated silicon photonic circuits with a high degree of functionality and performance complexity for many applications 1 . Different integration concepts have therefore been suggested, where one such technique is the heterogeneous integration of a vertical-cavity laser (VCL), referred to as a hybrid VCL. It is promising as it has potential to offer low drive currents, high modulation bandwidths, and small footprint [2][3][4] . In-plane emission with waveguide-coupling can be achieved by an intra-cavity waveguide embossed with a weak diffraction grating, as an example 5 . Integration of such short-wavelength laser sources on a silicon-nitride (SiN) waveguide platform on silicon may enable fully integrated silicon photonic circuits for applications not only in short-reach optical interconnects but also in life science and bio-photonics. Most biological species and processes are probed in the visible and near-infrared (400-1000 nm wavelengths), and of particular interest is the therapeutic window in the very-near-infrared (750-930 nm wavelengths) where there is minimal photo-damage to cells and negligible water absorption.As a first step in realizing short-wavelength hybrid VCLs with in-plane emission coupled to a SiN waveguide, we have developed a technique to produce high performance 850-nm hybrid VCLs with outof-plane emission. It is based on adhesive bonding of epitaxial AlGaAs-material onto a dielectric distributed Bragg reflector (DBR) on silicon [6][7][8] . We have fabricated devices with surface emission having sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed 8 . We have also shown experimentally that the bonding layer thickness can be used to optimize a certain performance parameter at a given temperature or to minimize the variation of performance over temperature 8 . Fig.1 Schematic cross-section of our 850-nm hybrid VCLs: surface-emitting design (top), and in-plane emitting design with SiNwaveguide coupling (bottom).Our top-emitting hybrid VCL design is shown in Fig.1, where the AlGaAs-material consists (from bottom to top) of an n-doped AlGaAs contact/current spreading layer, an active region with five 4-nm-thick InGaAs/AlGaAs quantum wells (QWs), a 30-nm-thick p-doped Al0.98Ga0.02As layer for the formation of an oxide aperture, and a p-doped 23 pair AlGaAs DBR. The dielectric DBR deposited on Silicon is a 20-pair SiO2/Ta2O5 DBR. The bonding layer consists of a thin layer of SiO2 (deposited on the dielectric DBR) and an ultra-thin layer of divinylsiloxane-bis-benzocyclobutene (DVS-BCB). The DVS-BCB layer is used as the adhesive bonding agent 9 , and its thickness is kept constant while the thickness of the SiO2 layer is used to control the bonding layer thickness. Fig. 2 shows scanning electron microscopy (SEM) images of a device cross-section, and measured steady-state characteristics for a 10 µm oxide aperture device with a ~65-nm-thick bonding layer, resulting in an ~853 nm resonance wavelength at...

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20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs

Cited by 15 publications

References 17 publications

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

On-chip surface-enhanced Raman spectroscopy using nanosphere-lithography patterned antennas on silicon nitride waveguides

Silicon-integrated hybrid-vertical-cavity lasers for life science applications

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