21% efficient screen-printed n-type silicon wafer solar cells with implanted phosphorus front surface field

Shanmugam, Vinodh; Khanna, Anuradha; Perez, Delio Justiniani; Tabajonda, Rowel Vigare; Ali, Jaffar Moideen Yacob; Ortega, Aguilar Luisa Ma; Garcia, Ison Jeffrey; Lim, Bianca; Mueller, Thomas

doi:10.1016/j.solmat.2018.06.036

Cited by 16 publications

(5 citation statements)

References 22 publications

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“…Shanmugam et al [12] investigaram células PERT base n com emissor seletivo posterior de boro e campo retrodifusor frontal (FSFfrontal surface field) de fósforo obtido por implantação iônica. A célula n-PERT foi formada com a mesma sequência de passivação de superfície, ablação por laser local na face posterior e metalização por serigrafia da célula PERC base p comercial.…”

Section: Células Solares Pert Base Nunclassified

“…Células solares com contatos posteriores interdigitados (IBC, interdigitated back contact) e de heterojunção com camada fina intrínseca (HIT, heterojunction with intrinsic thin-layer) são os dispositivos produzidos em Si tipo n e atingem altas eficiências, da ordem de 26% (HIT) a 27% (IBC) [10]. As diferenças na estrutura das células solares e no processo de fabricação destes dispositivos exigem linhas de produção com maior complexidade em comparação às linhas de células PERC do tipo p [11,12]. Tendo em vista que a maioria das plantas industriais atuais não usa estas estruturas, este artigo de revisão centra-se em estruturas tipo PERC, PERT e TOPCon, com malha metálica em ambas as faces, estruturas que podem ser industrializadas usando as linhas de fabricação existentes.…”

Section: Introductionunclassified

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Revisão sistemática de células solares de silício base n: estruturas e eficiências

et al. 2022

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Resumo Células solares com emissor e face posterior passivada (PERC, passivated emitter and rear cell) vêm dominando o mercado fotovoltaico em razão de seu processo de fabricação ser compatível com as linhas industriais que vinham sendo utilizadas e pela produção de dispositivos de alta eficiência. Atualmente o silício tipo p é o mais utilizado pela indústria de células solares, mas o silício tipo n deve ganhar mercado nos próximos anos juntamente com o emprego de lâminas de espessura reduzida. O objetivo deste trabalho é apresentar uma revisão sistemática dos principais estudos na área de células solares base n, sendo elas do tipo PERC, PERT (passivated emitter-rear totally diffused) e TOPCon (tunnel oxide passivated contact), com ênfase para a abordagem de contatos seletivos, emissores seletivos e nos processos utilizados, bem como na análise de células solares de espessura reduzida em relação ao padrão da indústria atual.

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Section: Células Solares Pert Base Nunclassified

Section: Introductionunclassified

Revisão sistemática de células solares de silício base n: estruturas e eficiências

et al. 2022

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“…Negro et al [19] have studied the electrical behavior of the high-dose phosphorus ion-implanted process. While Shanmugam et al [20] have studied the impact of phosphorus ion-implantation on electrical characteristics of PERC devices and achieved 21% conversion efficiency. Toregrosa et al [21] have studied the impact of implant dose of phosphorus for Al-BSF, PERC, and PERT silicon solar cells by using PULSION Plasma Immersion Ion Implantation.…”

Section: Introductionmentioning

confidence: 99%

Process and device simulations aimed at improving the emitter region performance of silicon PERC solar cells

Kashyap¹,

Madan²,

Pandey³

et al. 2021

J. Micromech. Microeng.

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Achieved levels of Silicon-based passivated emitter and rear cell (PERC) solar cells' laboratory and module-level conversion efficiencies are still far from the theoretically achievable Auger limit of 29.4% for silicon solar cells, prominently due to emitter recombination and resistive losses. The emitter region in PERC devices is formed by using either ion implantation followed by a diffusion process or POCl3 diffusion. In ion-implanted emitter-based PERC, the process variables such as dose, energy, diffusion time, and temperature play a vital role in defining the characteristics of the emitter region. Detailed investigation of these parameters could provide a pathway to mitigate the recombination as well as resistive losses; however, it requires a considerable budget to optimize these parameters through a purely experimental approach. Therefore, advanced industrial standard process and device simulation are perceived in this work to carry out the comprehensive study of process variables. Investigation of ion implantation and diffusion process parameters on the PV performance of an upright pyramid textured, industrial standard stacked dielectric passivated PERC solar cell is carried out to deliver 22.8% conversion efficiency with improved PV parameters such as short circuit current density (JSC) of 40.8 mA/cm2, open-circuit voltage (VOC) of 686 mV, and fill-factor (FF) of 81.54% at optimized implantation and diffusion parameters, such as implantation dose of 5×1015 cm-2 with energy 30 keV followed 950 oC diffusion temperature and 30 min of diffusion time. The performance of the optimized PERC device is compared with already published large area screen printed contact-based device. This work may open up a window for the experimental work to understand the influence of process parameters on the emitter region to develop the highly efficient PERC solar cell in the future.

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“…Moreover, the effect of n-type silicon substrate on these two steps is explained in section 3 of this paper. Furthermore, SACE process can be applied for n-type silicon solar cell which has attracted many scientific interest recently because of their high lifetime [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Formation of silver nanoparticles and their application for suppressing surface reflection ofn-type silicon

Nguyen

Phan

Dang

et al. 2019

Adv. Nat. Sci: Nanosci. Nanotechnol.

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In this paper silver-assisted chemical etching (SACE) was studied to increase roughness and reduce light reflection from the surface of n-type (100) mono-crystalline silicon. SACE process includes two basic steps which are silver deposition and chemical etching step. Simple electroless silver deposition step using mixture of AgNO 3 and HF was utilized to form silver nanoparticles onto n-type silicon surface. Following chemical etching step was carried out by immersing samples in mixture of HF and H 2 O 2 . Concentration of AgNO 3 in eletroless deposition step and concentration of HF in chemical etching step were investigated to get minimum reflectance. The surface of sample was characterized by scanning electron microscopy (SEM), field emission scanning electron microscopy (FE-SEM) and sample reflectance was measured at the wavelength range from 350-1100 nm. The results show that reflectance depends on AgNO 3 concentration in electroless deposition step and HF concentration in etching step and the minimum solar-weighted reflectance is 1.74%. This method can be considered as simple, inexpensive method to effectively increase roughness and suppress light reflection for photovoltaic, optoelectronic, sensor, photonic applications.

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21% efficient screen-printed n-type silicon wafer solar cells with implanted phosphorus front surface field

Cited by 16 publications

References 22 publications

Revisão sistemática de células solares de silício base n: estruturas e eficiências

Revisão sistemática de células solares de silício base n: estruturas e eficiências

Process and device simulations aimed at improving the emitter region performance of silicon PERC solar cells

Formation of silver nanoparticles and their application for suppressing surface reflection ofn-type silicon

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