210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

Wang, Ronghua; Li, Guowang; Laboutin, Oleg; Cao, Yu; Johnson, Wayne; Snider, Gregory L.; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

doi:10.1109/led.2011.2147753

Cited by 99 publications

(62 citation statements)

References 17 publications

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“…6. Optimal conditions for f T > 200 GHz [30][31][32][33][34][35][36]. HFETs are processed from wafers with different 2DEG density (symbols).…”

Section: Discussionmentioning

confidence: 99%

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Window for better reliability of nitride heterostructure field effect transistors

Matulionis¹,

Liberis²,

Šermukšnis³

et al. 2012

Microelectronics Reliability

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“…6. Optimal conditions for f T > 200 GHz [30][31][32][33][34][35][36]. HFETs are processed from wafers with different 2DEG density (symbols).…”

Section: Discussionmentioning

confidence: 99%

“…Recently, the unity gain cut-off frequency, f T , has exceeded 200 GHz for GaN HFETs [30][31][32][33][34][35][36]. The best frequency performance is demonstrated by the devices processed from heterostructures with different initial 2DEG density measured before transistor processing.…”

Section: Electron-density Window For Best Frequency Performancementioning

confidence: 99%

Window for better reliability of nitride heterostructure field effect transistors

Matulionis¹,

Liberis²,

Šermukšnis³

et al. 2012

Microelectronics Reliability

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“…Current saturation is not observed in the pulsed I − V measurements due to short channel effects. To improve the large signal performance and enhance environmental robustness, passivation of surface states is necessary in future devices 16,17 . On-wafer device RF measurements were taken using an HP 8510C vector network analyzer in the frequency range from 0.25 to 30 GHz.…”

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confidence: 99%

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Ganguly

et al. 2017

Applied Physics Letters

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We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a twodimensional electron gas (2DEG) density in excess of 2×10 13 /cm 2 . Ohmic contacts to the 2DEG channel were formed by n + GaN MBE regrowth process, with a contact resistance of 0.13 Ω·mm. Raman spectroscopy using the quantum well as an optical marker reveals the strain in the quantum well, and strain relaxation in the regrown GaN contacts. A 65-nm-long rectangular-gate device showed a record high DC drain current drive of 2.0 A/mm and peak extrinsic transconductance of 250 mS/mm. Small-signal RF performance of the device achieved current gain cutoff frequency f T ∼ 120 GHz. The DC and RF performance demonstrate that bulk AlN substrates offer an attractive alternative platform for strained quantum well nitride transistors for future high-voltage and high-power microwave applications.State-of-art gallium nitride based electronic devices have demonstrated excellent performance in highfrequency and high-power applications 1-5 . These devices are on thick GaN buffer layers, most of which are on SiC substrates for efficient thermal dissipation. The heteroepitaxially grown GaN layers inherently incorporate high density of dislocations (typically ∼ 10 9 /cm 2 ), which give rise to reliability issues and degrade breakdown characteristics.In this letter we show that thin strained GaN quantum well double heterostructures on bulk AlN substrates offer an attractive alternative approach for high-performance nitride electronics. To meet the scaling requirements for high-speed high-power RF applications, tight electrostatic control and quantum confinement of charge carriers are highly desired. The wide direct band gap of AlN (∼6.2 eV) and its large band offset with GaN offers the maximal vertical confinement of carriers in nitride channels. The large polarization charge of AlN induces high density two-dimensional electron gases (2DEG) in the quantum well, which is desired for high current drive and lateral scaling of gate lengths. The thermal conductivity of AlN, estimated 6 to be as high as ∼340 W/m·K can be comparable 7 to that of SiC ∼370 W/m·K, and offers the potential benefit of reducing thermal boundary resistance. Thus AlN simultaneously satisfies the conflicting requirements of high thermal conductivity and high electrical resistivity for high-power microwave electronics. Importantly, the low dislocation density (∼ 10 4 /cm 2 ) of single-crystal bulk AlN substrates has the potential for defect-free channels and barriers in principle, which is a promising prospective for improving thermal robustness, reliability, breakdown, and noise characteristics of these devices 8 . The presence of a very thin GaN quantum well active region embedded in the AlN/GaN/AlN double heta) Electronic mail: djena@cornell.edu. erostructure also enables selective optical-marker based Raman metrology of strain 9 present in the active layer...

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“…Post-growth passivation techniques have become the most popular method to address the deleterious effects of surface state traps and include conformal oxide and nitride depositions [3], [4], [5], [6]. Surface chemical treatments have been investigated to minimize the effects of virtual gating on frequency performance [7], [8], [9]. Alternative approaches for epitaxial passivation have also been given some attention [10].…”

mentioning

confidence: 99%

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Deen

Storm

Katzer

et al. 2016

Applied Physics Letters

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A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

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210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

Cited by 99 publications

References 17 publications

Window for better reliability of nitride heterostructure field effect transistors

Window for better reliability of nitride heterostructure field effect transistors

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

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