2017
DOI: 10.1063/1.4975702
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Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Abstract: We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a twodimensional electron gas (2DEG) density in excess of 2×10 13 /cm 2 . Ohmic contacts to the 2DEG channel were formed by n + GaN MBE regrowth process, with a contact resistance of 0.13 Ω·mm. Raman spectroscopy using the quantum well as an optical marker reveals the strain in the quantum well, and strain re… Show more

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Cited by 56 publications
(52 citation statements)
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“…Contrary to the 2DEG density, the 2DEG mobility is not affected by the GaN channel thickness, at least in the investigated range. Figure shows a benchmark of the mobility as a function of the 2DEG density for different AlN‐based HEMTs grown on various substrates . The mobility values are almost constant, from 622 to 636 cm 2 V −1 s −1 , for the studied structures grown on Si.…”
Section: Resultsmentioning
confidence: 98%
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“…Contrary to the 2DEG density, the 2DEG mobility is not affected by the GaN channel thickness, at least in the investigated range. Figure shows a benchmark of the mobility as a function of the 2DEG density for different AlN‐based HEMTs grown on various substrates . The mobility values are almost constant, from 622 to 636 cm 2 V −1 s −1 , for the studied structures grown on Si.…”
Section: Resultsmentioning
confidence: 98%
“…It is usually hard to obtain such low contact resistance without using a regrown Ohmic contact step. For example, the regrowth of highly n‐type doped GaN allows to get 0.13 Ω mm on very similar AlN‐based HEMTs grown on AlN substrate . Concerning HEMTs with an AlN barrier on thick GaN buffer layer on Si, usually, an additional etching step of the cap is necessary, prior to the metal deposition and annealing at>850°C is needed to routinely achieve values around 0.35 Ω mm…”
Section: Resultsmentioning
confidence: 99%
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“…In recent years, its outstanding irradiation resistance and biocompatibility have been widely recognized, which make it a promising candidate material for nuclear fusion reactors and biomedical applications . Besides, as one of the competitive third‐generation semiconductor materials, its wide bandgap and high saturated electron drift velocity enable SiC devices to be applied in high voltage modulus of electric vehicles and components in solar power system . Although a high growth rate is crucial to meet the rising market demand and reduce the cost in mass production, the associated growth defects would not only limit its electronic performance, also severely degrade the mechanical properties of SiC filament.…”
Section: Introductionmentioning
confidence: 99%